CR4N65A3K CR Micro 650V 4A N-Channel MOSFET TO-251
CR4N65A3K CR Micro 650V 4A N-Channel MOSFET TO-251

CR4N65A3K CR Micro 650V 4A N-Channel MOSFET TO-251

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pCR4N65A3K CR Micro 650V 4A N-Channel MOSFET TO-251 — Rds(on) 2400 mΩ typ, Qg 15.8 nC./p
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    At a Glance
    • 650 V / 4 A continuous drain current, TO-251 package
    • Rds(on) 2400 mΩ typ, 2800 mΩ max at VGS = 10 V
    • Qg 15.8 nC and Ciss 564 pF
    • N-channel, Planar process

    The CR Micro CR4N65A3K is a 650 V 4 A N-channel MOSFET in a TO-251 package, built on the Planar process. On-resistance is 2400 mΩ typical and 2800 mΩ maximum at a 10 V gate drive; gate charge is 15.8 nC with 564 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)650 V
    Continuous Drain Current (ID)4 A
    Rds(on) @ VGS = 10 V, typ.2400 mΩ
    Rds(on) @ VGS = 10 V, max.2800 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)15.8 nC
    Input Capacitance (Ciss)564 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-251

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJH390N65GC650V11A39045022790TO-251
    CS8N65A3R-G650V8A8601000291540TO-251
    CR7N65A3K650V7A12001400241080TO-251
    CS7N65A31RC-G650V7A1200140023.31114TO-251
    CS7N65A3R650V7A12001400241130TO-251
    CS7N65A3RC-G650V7A1200140023.31114TO-251
    CS5N65A3650V5A1600190019706TO-251
    CR4N65A3K650V4A2400280015.8564TO-251
    CS4N65A3R650V4A2400280014.5610TO-251
    CS2N65A3R-G650V2A420050009.5335TO-251

    10 part numbers share the same 650 / TO-251 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CR4N65A3K an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 650 V.

    Can the CR4N65A3K be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CR4N65A3K?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CR4N65A3K need?

    Qg is 15.8 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CR4N65A3K come in?

    TO-251. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 10 part numbers in this rating group?

    All 10 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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