CRG100T120BX5HDZ CR Micro 1200V 100A IGBT TO-247PLUS
CRG100T120BX5HDZ CR Micro 1200V 100A IGBT TO-247PLUS

CRG100T120BX5HDZ CR Micro 1200V 100A IGBT TO-247PLUS

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pCRG100T120BX5HDZ CR Micro 1200V 100A IGBT TO-247PLUS — VCE(sat) 1.65 V, Eoff 3.1 mJ./p
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    At a Glance
    • 1200 V / 100 A continuous collector current, TO-247PLUS
    • VCE(sat) 1.65 V
    • Eoff 3.1 mJ per turn-off
    • Trench FS Ⅴ technology

    The CR Micro CRG100T120BX5HDZ is a 1200 V 100 A IGBT in a TO-247PLUS package. Its saturation voltage is 1.65 V; turn-off loss is 3.1 mJ per pulse; the anti-parallel diode drops 2.7 V. The die is built on Trench FS Ⅴ technology.

    Key Specifications

    Collector-Emitter Voltage (VCES)1200 V
    Continuous Collector Current (IC)100 A
    Collector-Emitter Saturation (VCE(sat))1.65 V
    Gate-Emitter Voltage (VGE)5.4 V
    Turn-off Loss (Eoff)3.1 mJ
    Diode Forward Voltage (VF)2.7 V
    TechnologyTrench FS Ⅴ
    PackageTO-247PLUS

    Same-Rating Selection Table

    Part NumberVCESICVCE(sat)EoffVFTechnologyPackage
    CRG40T120AX3SD-Z1200V40A1.9V1.52.1VTrench FS IIITO-247PLUS
    CRG40T120BX5HDZ-G1200V40A1.65V1.82.6VTrench FS ⅤTO-247PLUS
    CRG50T120AX3HD-Z1200V50A1.92V1.962.1VTrench FS IIITO-247PLUS
    CRG50T120BX5HDZ-G1200V50A1.65V1.52.5VTrench FS ⅤTO-247PLUS
    CRG50T120CX3SD-Z1200V50A1.7V2.462VTrench FS IIITO-247PLUS
    CRG50T120CX3SDQ1200V50A1.72V2.462VTrench FS IIITO-247PLUS
    CRG75T120AX3HD-Z1200V75A1.88V4.42.2VTrench FS IIITO-247PLUS
    CRG75T120BX5HDZ-G1200V75A1.65V2.42.6VTrench FS ⅤTO-247PLUS
    CRG75T120CX3SD-Z1200V75A1.7V3.92VTrench FS IIITO-247PLUS
    CRG100T120BX5HDZ1200V100A1.65V3.12.7VTrench FS ⅤTO-247PLUS

    10 part numbers share the same 1200 / TO-247PLUS rating — sorted by current.

    Process Technology

    Trench FS Ⅴ refers to a trench-gate field-stop structure. Field-stop layers let the wafer be thinned while keeping the blocking voltage, which cuts both saturation voltage and turn-off loss. The roman numeral is the generation: later generations trade conduction loss for switching speed.

    Applications

    Solar inverters, three-phase motor drives, UPS, and railway auxiliary converters.

    Selection Notes

    • VCE(sat) is quoted at a specific collector current and gate voltage. Re-check the datasheet curve at your actual operating current and junction temperature.
    • Eoff trades directly against VCE(sat). Faster technology generations give lower Eoff at equal saturation, which is why a newer generation can run at a higher switching frequency.
    • Check the short-circuit withstand time before using the part in a drive with a hard fault path.
    • Confirm whether the anti-parallel diode is co-packaged or separate — the VF figure above refers to the internal diode where one is present.

    Common Questions

    What is the blocking voltage of the CRG100T120BX5HDZ?

    VCES is 1200 V, with a continuous collector current of 100 A.

    What is the saturation voltage of the CRG100T120BX5HDZ?

    VCE(sat) is 1.65 V at the rated current and gate voltage stated in the datasheet.

    How much switching loss does the CRG100T120BX5HDZ have?

    Turn-off loss Eoff is 3.1 mJ per pulse under the test conditions in the datasheet. Switching loss scales with bus voltage and current, so recalculate for your operating point.

    What technology does the CRG100T120BX5HDZ use?

    Trench FS Ⅴ. Field-stop trench structures raise the electric field in the drift region while keeping the wafer thin, which lowers both VCE(sat) and Eoff against a planar IGBT.

    What package does the CRG100T120BX5HDZ come in?

    TO-247PLUS. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 10 part numbers in this rating group?

    All 10 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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