CRG15T65R95SDZ-G-3 CR Micro 650V 15A IGBT TO-220F

The CR Micro CRG15T65R95SDZ-G-3 is a 650 V 15 A IGBT in a TO-220F package. Its saturation voltage is 1.55 V; turn-off loss is 0.15 mJ per pulse; the anti-parallel diode drops 1.45 V. The die is built on Trench FS Ⅴ technology.

Key Specifications

Same-Rating Selection Table

10 part numbers share the same 650 / TO-220F rating — sorted by current.

Process Technology

Trench FS Ⅴ refers to a trench-gate field-stop structure. Field-stop layers let the wafer be thinned while keeping the blocking voltage, which cuts both saturation voltage and turn-off loss. The roman numeral is the generation: later generations trade conduction loss for switching speed.

Applications

Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

Selection Notes

• VCE(sat) is quoted at a specific collector current and gate voltage. Re-check the datasheet curve at your actual operating current and junction temperature.
• Eoff trades directly against VCE(sat). Faster technology generations give lower Eoff at equal saturation, which is why a newer generation can run at a higher switching frequency.
• Check the short-circuit withstand time before using the part in a drive with a hard fault path.
• Confirm whether the anti-parallel diode is co-packaged or separate — the VF figure above refers to the internal diode where one is present.

Common Questions

What is the blocking voltage of the CRG15T65R95SDZ-G-3?

VCES is 650 V, with a continuous collector current of 15 A.

What is the saturation voltage of the CRG15T65R95SDZ-G-3?

VCE(sat) is 1.55 V at the rated current and gate voltage stated in the datasheet.

How much switching loss does the CRG15T65R95SDZ-G-3 have?

Turn-off loss Eoff is 0.15 mJ per pulse under the test conditions in the datasheet. Switching loss scales with bus voltage and current, so recalculate for your operating point.

What technology does the CRG15T65R95SDZ-G-3 use?

Trench FS Ⅴ. Field-stop trench structures raise the electric field in the drift region while keeping the wafer thin, which lowers both VCE(sat) and Eoff against a planar IGBT.

What package does the CRG15T65R95SDZ-G-3 come in?

TO-220F. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

How do I choose between the 10 part numbers in this rating group?

All 10 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.