CRG40T100BX3S CR Micro 1000V 40A IGBT TO-247PLUS
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- 1000 V / 40 A continuous collector current, TO-247PLUS
- VCE(sat) 1.9 V
- Eoff 1 mJ per turn-off
- Trench FS III technology
The CR Micro CRG40T100BX3S is a 1000 V 40 A IGBT in a TO-247PLUS package. Its saturation voltage is 1.9 V; turn-off loss is 1 mJ per pulse; the anti-parallel diode drops 1.8 V. The die is built on Trench FS III technology.
Key Specifications
| Collector-Emitter Voltage (VCES) | 1000 V |
| Continuous Collector Current (IC) | 40 A |
| Collector-Emitter Saturation (VCE(sat)) | 1.9 V |
| Gate-Emitter Voltage (VGE) | 5.8 V |
| Turn-off Loss (Eoff) | 1 mJ |
| Diode Forward Voltage (VF) | 1.8 V |
| Technology | Trench FS III |
| Package | TO-247PLUS |
Process Technology
Trench FS III refers to a trench-gate field-stop structure. Field-stop layers let the wafer be thinned while keeping the blocking voltage, which cuts both saturation voltage and turn-off loss. The roman numeral is the generation: later generations trade conduction loss for switching speed.
Applications
Solar inverters, three-phase motor drives, UPS, and railway auxiliary converters.
Selection Notes
- VCE(sat) is quoted at a specific collector current and gate voltage. Re-check the datasheet curve at your actual operating current and junction temperature.
- Eoff trades directly against VCE(sat). Faster technology generations give lower Eoff at equal saturation, which is why a newer generation can run at a higher switching frequency.
- Check the short-circuit withstand time before using the part in a drive with a hard fault path.
- Confirm whether the anti-parallel diode is co-packaged or separate — the VF figure above refers to the internal diode where one is present.
Common Questions
What is the blocking voltage of the CRG40T100BX3S?
VCES is 1000 V, with a continuous collector current of 40 A.
What is the saturation voltage of the CRG40T100BX3S?
VCE(sat) is 1.9 V at the rated current and gate voltage stated in the datasheet.
How much switching loss does the CRG40T100BX3S have?
Turn-off loss Eoff is 1 mJ per pulse under the test conditions in the datasheet. Switching loss scales with bus voltage and current, so recalculate for your operating point.
What technology does the CRG40T100BX3S use?
Trench FS III. Field-stop trench structures raise the electric field in the drift region while keeping the wafer thin, which lowers both VCE(sat) and Eoff against a planar IGBT.
What package does the CRG40T100BX3S come in?
TO-247PLUS. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
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