CRJB1K4N80G2E CR Micro 800V 4A N-Channel MOSFET SOT-223
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- 800 V / 4 A continuous drain current, SOT-223 package
- Rds(on) 1100 mΩ typ, 1400 mΩ max at VGS = 10 V
- Qg 10 nC and Ciss 230 pF
- N-channel, Super Junction process
The CR Micro CRJB1K4N80G2E is a 800 V 4 A N-channel MOSFET in a SOT-223 package, built on the Super Junction process. On-resistance is 1100 mΩ typical and 1400 mΩ maximum at a 10 V gate drive; gate charge is 10 nC with 230 pF input capacitance; threshold voltage spans 3 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID) | 4 A |
| Rds(on) @ VGS = 10 V, typ. | 1100 mΩ |
| Rds(on) @ VGS = 10 V, max. | 1400 mΩ |
| Gate Threshold Voltage (VGS(th)) | 3 – 4 V |
| Total Gate Charge (Qg) | 10 nC |
| Input Capacitance (Ciss) | 230 pF |
| Channel Polarity | N-channel |
| Process Family | Super Junction |
| Package | SOT-223 |
Process Technology
Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.
Applications
High-voltage offline supplies, active clamp topologies, and single-stage PFC.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRJB1K4N80G2E an N-channel or P-channel device?
It is N-channel. The drain-source rating is 800 V.
Can the CRJB1K4N80G2E be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRJB1K4N80G2E?
VGS(th) is specified between 3 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRJB1K4N80G2E need?
Qg is 10 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRJB1K4N80G2E come in?
SOT-223. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
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