
The CR Micro CRJD1K4N80G2E is a 800 V 4 A N-channel MOSFET in a TO-252 package, built on the Super Junction process. On-resistance is 1100 mΩ typical and 1400 mΩ maximum at a 10 V gate drive; threshold voltage spans 3 to 4 V.
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID) | 4 A |
| Rds(on) @ VGS = 10 V, typ. | 1100 mΩ |
| Rds(on) @ VGS = 10 V, max. | 1400 mΩ |
| Gate Threshold Voltage (VGS(th)) | 3 – 4 V |
| Channel Polarity | N-channel |
| Process Family | Super Junction |
| Package | TO-252 |
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRJD450N80G2 | 800V | 10A | 350 | 450 | 25 | 861 | TO-252 |
| CRJD600N80G2E | 800V | 8A | 490 | 600 | TO-252 | ||
| CRJD750N80G2E | 800V | 7A | 650 | 750 | TO-252 | ||
| CRJD900N80G2E | 800V | 6A | 700 | 900 | TO-252 | ||
| CRJD1K4N80G2E | 800V | 4A | 1100 | 1400 | TO-252 | ||
| CS6N80A4R-G | 800V | 6A | 1800 | 2200 | 28.4 | 1556 | TO-252 |
| CS4N80A4HD | 800V | 4A | 2200 | 2800 | 25 | 865 | TO-252 |
| CS4N80A4R-G | 800V | 4A | 3300 | 3800 | 20 | 698 | TO-252 |
| CS3N80A4R | 800V | 3A | 3700 | 4800 | 17.3 | 567 | TO-252 |
| CS3N80A4RZ-G | 800V | 3A | 3700 | 4800 | 17.3 | 567 | TO-252 |
| CS2N80A4R | 800V | 2A | 9400 | 10500 | 10.9 | 261 | TO-252 |
11 part numbers share the same 800 / TO-252 / N rating — sorted by rds(on) typ.
Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.
High-voltage offline supplies, active clamp topologies, and single-stage PFC.
Is the CRJD1K4N80G2E an N-channel or P-channel device?
It is N-channel. The drain-source rating is 800 V.
Can the CRJD1K4N80G2E be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRJD1K4N80G2E?
VGS(th) is specified between 3 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
What package does the CRJD1K4N80G2E come in?
TO-252. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 11 part numbers in this rating group?
All 11 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd