CRJD1KN65G2 CR Micro 650V 5A N-Channel MOSFET TO-252
CRJD1KN65G2 CR Micro 650V 5A N-Channel MOSFET TO-252

CRJD1KN65G2 CR Micro 650V 5A N-Channel MOSFET TO-252

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pCRJD1KN65G2 CR Micro 650V 5A N-Channel MOSFET TO-252 — Rds(on) 900 mΩ typ, Qg 9 nC./p
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    At a Glance
    • 650 V / 5 A continuous drain current, TO-252 package
    • Rds(on) 900 mΩ typ, 1000 mΩ max at VGS = 10 V
    • Qg 9 nC and Ciss 256 pF
    • N-channel, Super Junction process

    The CR Micro CRJD1KN65G2 is a 650 V 5 A N-channel MOSFET in a TO-252 package, built on the Super Junction process. On-resistance is 900 mΩ typical and 1000 mΩ maximum at a 10 V gate drive; gate charge is 9 nC with 256 pF input capacitance; threshold voltage spans 3 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)650 V
    Continuous Drain Current (ID)5 A
    Rds(on) @ VGS = 10 V, typ.900 mΩ
    Rds(on) @ VGS = 10 V, max.1000 mΩ
    Gate Threshold Voltage (VGS(th))3 – 4 V
    Total Gate Charge (Qg)9 nC
    Input Capacitance (Ciss)256 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageTO-252

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJD140N65G4Z650V23A112140341540TO-252
    CRJD185N65G4M650V14A142185251180TO-252
    CRJD185N65G4Z650V17A150180251150TO-252
    CRJD190N65G4F650V14A160190241030TO-252
    CRJD240N65G4650V12A19024021930TO-252
    CRJD240N65G4F650V12A20024020850TO-252
    CRJD290N65G4650V11A24029018800TO-252
    CRJD290N65G4F650V11A25529017725TO-252
    CRJD290N65G4M650V11A26529018830TO-252
    CRJD290N65G2650V13A27030023.5750TO-252
    CRJD290N65G2M650V13A28030015700TO-252
    CRJD380N65G2650V11A33038020572TO-252
    CRJD380N65G4EM650V9A33038012600TO-252
    CRJD380N65G4EMF650V9A35038011550TO-252
    CRJD390N65GC650V11A39045022790TO-252
    CRJD550N65G2650V8A42055015.6470TO-252
    CRJD550N65G2M650V7A46055013.3432TO-252
    CRJD550N65G4EM650V6A4605508.4440TO-252
    CRJD650N65G2650V7A59065012.5382TO-252
    CRJD650N65GC650V7A60068015416TO-252
    CRJD850N65GC650V5A73085011410TO-252
    CS8N65A4R-G650V8A8601000291540TO-252
    CRJD1KN65G2650V5A90010009256TO-252
    CR7N65A4K650V7A12001400241080TO-252
    CS7N65A4R650V7A12001400241130TO-252
    CS7N65A4RC-G650V7A1200140023.31114TO-252
    CS5N65A4650V5A1600190019706TO-252
    CS4N65A4RC-G650V4A2300280015.1576TO-252
    CR4N65A4K650V4A2400280015.8564TO-252
    CS4N65A4R650V4A2400280014.5610TO-252
    CS2N65A4R650V2A420050009.5335TO-252

    31 part numbers share the same 650 / TO-252 / N rating — sorted by rds(on) typ.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJD1KN65G2 an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 650 V.

    Can the CRJD1KN65G2 be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJD1KN65G2?

    VGS(th) is specified between 3 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJD1KN65G2 need?

    Qg is 9 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJD1KN65G2 come in?

    TO-252. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 31 part numbers in this rating group?

    All 31 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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