CRJD450N80G2 CR Micro 800V 10A N-Channel MOSFET TO-252
CRJD450N80G2 CR Micro 800V 10A N-Channel MOSFET TO-252

CRJD450N80G2 CR Micro 800V 10A N-Channel MOSFET TO-252

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pCRJD450N80G2 CR Micro 800V 10A N-Channel MOSFET TO-252 — Rds(on) 350 mΩ typ, Qg 25 nC./p
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    At a Glance
    • 800 V / 10 A continuous drain current, TO-252 package
    • Rds(on) 350 mΩ typ, 450 mΩ max at VGS = 10 V
    • Qg 25 nC and Ciss 861 pF
    • N-channel, Super Junction process

    The CR Micro CRJD450N80G2 is a 800 V 10 A N-channel MOSFET in a TO-252 package, built on the Super Junction process. On-resistance is 350 mΩ typical and 450 mΩ maximum at a 10 V gate drive; gate charge is 25 nC with 861 pF input capacitance; threshold voltage spans 3 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)800 V
    Continuous Drain Current (ID)10 A
    Rds(on) @ VGS = 10 V, typ.350 mΩ
    Rds(on) @ VGS = 10 V, max.450 mΩ
    Gate Threshold Voltage (VGS(th))3 – 4 V
    Total Gate Charge (Qg)25 nC
    Input Capacitance (Ciss)861 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageTO-252

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJD450N80G2800V10A35045025861TO-252
    CRJD600N80G2E800V8A490600TO-252
    CRJD750N80G2E800V7A650750TO-252
    CRJD900N80G2E800V6A700900TO-252
    CRJD1K4N80G2E800V4A11001400TO-252
    CS6N80A4R-G800V6A1800220028.41556TO-252
    CS4N80A4HD800V4A2200280025865TO-252
    CS4N80A4R-G800V4A3300380020698TO-252
    CS3N80A4R800V3A3700480017.3567TO-252
    CS3N80A4RZ-G800V3A3700480017.3567TO-252
    CS2N80A4R800V2A94001050010.9261TO-252

    11 part numbers share the same 800 / TO-252 / N rating — sorted by rds(on) typ.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    High-voltage offline supplies, active clamp topologies, and single-stage PFC.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJD450N80G2 an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 800 V.

    Can the CRJD450N80G2 be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJD450N80G2?

    VGS(th) is specified between 3 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJD450N80G2 need?

    Qg is 25 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJD450N80G2 come in?

    TO-252. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 11 part numbers in this rating group?

    All 11 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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