CRJL110N65G4FZ CR Micro 650V 23A N-Channel MOSFET DFN8*8
CRJL110N65G4FZ CR Micro 650V 23A N-Channel MOSFET DFN8*8

CRJL110N65G4FZ CR Micro 650V 23A N-Channel MOSFET DFN8*8

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pCRJL110N65G4FZ CR Micro 650V 23A N-Channel MOSFET DFN8*8 — Rds(on) 88 mΩ typ, Qg 43 nC./p
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    At a Glance
    • 650 V / 23 A continuous drain current, DFN8*8 package
    • Rds(on) 88 mΩ typ, 110 mΩ max at VGS = 10 V
    • Qg 43 nC and Ciss 1900 pF
    • N-channel, Super Junction process

    The CR Micro CRJL110N65G4FZ is a 650 V 23 A N-channel MOSFET in a DFN8*8 package, built on the Super Junction process. On-resistance is 88 mΩ typical and 110 mΩ maximum at a 10 V gate drive; gate charge is 43 nC with 1900 pF input capacitance; threshold voltage spans 3 to 5 V.

    Key Specifications

    Drain-Source Voltage (VDS)650 V
    Continuous Drain Current (ID)23 A
    Rds(on) @ VGS = 10 V, typ.88 mΩ
    Rds(on) @ VGS = 10 V, max.110 mΩ
    Gate Threshold Voltage (VGS(th))3 – 5 V
    Total Gate Charge (Qg)43 nC
    Input Capacitance (Ciss)1900 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageDFN8*8

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJL65N65G4FZ650V38A4665773450DFN8*8
    CRJL80N65G4FZ650V33A6880582550DFN8*8
    CRJL99N65G4FZ650V25A8299452000DFN8*8
    CRJL110N65G4FZ650V23A88110431900DFN8*8
    CRJL125N65G2BF650V25A103125521580DFN8*8
    CRJL140N65G4Z650V16A112140341540DFN8*8
    CRJL145N65G4FZ650V15A120145321380DFN8*8
    CRJL185N65G4M650V14A142185251180DFN8*8
    CRJL185N65G4Z650V15A150185251150DFN8*8
    CRJL190N65G2650V16A15019040.51377DFN8*8
    CRJL190N65G4F650V14A160190241030DFN8*8
    CRJL240N65G4650V11A19024021930DFN8*8
    CRJL240N65G4F650V11A20024020850DFN8*8
    CRJL290N65G4650V10A24029018800DFN8*8
    CRJL290N65G4F650V10A25529017725DFN8*8

    15 part numbers share the same 650 / DFN8*8 / N rating — sorted by rds(on) typ.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJL110N65G4FZ an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 650 V.

    Can the CRJL110N65G4FZ be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJL110N65G4FZ?

    VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJL110N65G4FZ need?

    Qg is 43 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJL110N65G4FZ come in?

    DFN8*8. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 15 part numbers in this rating group?

    All 15 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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