CRJQ33N65G2BF CR Micro 650V 79A N-Channel MOSFET TO-247
CRJQ33N65G2BF CR Micro 650V 79A N-Channel MOSFET TO-247

CRJQ33N65G2BF CR Micro 650V 79A N-Channel MOSFET TO-247

Share
pCRJQ33N65G2BF CR Micro 650V 79A N-Channel MOSFET TO-247 — Rds(on) 30 mΩ typ, Qg 207 nC./p
    • Product Details
    • Download
    At a Glance
    • 650 V / 79 A continuous drain current, TO-247 package
    • Rds(on) 30 mΩ typ, 36 mΩ max at VGS = 10 V
    • Qg 207 nC and Ciss 5550 pF
    • N-channel, Super Junction process

    The CR Micro CRJQ33N65G2BF is a 650 V 79 A N-channel MOSFET in a TO-247 package, built on the Super Junction process. On-resistance is 30 mΩ typical and 36 mΩ maximum at a 10 V gate drive; gate charge is 207 nC with 5550 pF input capacitance; threshold voltage spans 3.2 to 4.6 V.

    Key Specifications

    Drain-Source Voltage (VDS)650 V
    Continuous Drain Current (ID)79 A
    Rds(on) @ VGS = 10 V, typ.30 mΩ
    Rds(on) @ VGS = 10 V, max.36 mΩ
    Gate Threshold Voltage (VGS(th))3.2 – 4.6 V
    Total Gate Charge (Qg)207 nC
    Input Capacitance (Ciss)5550 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageTO-247

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJQ19N65G4Z650V115A141925011800TO-247
    CRJQ19N65G4BFZ650V121A151924010700TO-247
    CRJQ19N65G4FZ650V109A1619260111060TO-247
    CRJQ22N65G4BFZ650V89A19221858500TO-247
    CRJQ22N65G4FZ650V95A19222008900TO-247
    CRJQ22N65G4FZ650V89A19222008900TO-247
    CRJQ22N65G4BFQ650V96A21241878500TO-247
    CRJQ28N65G4FZ650V80A23281557000TO-247
    CRJQ38N65G4FQ650V72A29381356200TO-247
    CRJQ33N65G2BF650V79A30362075550TO-247
    CRJQ40N65G4FZ650V62A35401004500TO-247
    CRJQ40N65G2BF650V72A36401584900TO-247
    CRJQ45N65G4Z650V55A38451004580TO-247
    CRJQ50N65G4BFZ650V55A4050934100TO-247
    CRJQ50N65G4FZ650V50A4050974250TO-247
    CRJQ41N65GCF650V70A42481686594TO-247
    CRJQ41N65GCP650V74A42481726622TO-247
    CRJQF41N65GC650V70A42481766470TO-247
    CRJQ60N65G2BF650V50A45601283395TO-247
    CRJQ65N65G4FZ650V42A4665773450TO-247
    CRJQ80N65G4FZ650V33A6880582550TO-247
    CRJQ80N65G4FQ650V33A6980582500TO-247
    CRJQ80N65GC650V43A70801044200TO-247
    CRJQ80N65G2BF650V40A7285762370TO-247
    CRJQ80N65F650V43A7790843445TO-247
    CRJQ99N65G4FZ650V27A8299452000TO-247
    CRJQ110N65G4FZ650V26A88110431900TO-247
    CRJQ99N65G2BF650V31A90103701900TO-247
    CRJQ99N65G2F650V31A90103572050TO-247
    CRJQ125N65G2BF650V27A103125301580TO-247
    CRJQ140N65G2BF650V24A110140561450TO-247
    CRJQ140N65G2F650V25A110140461595TO-247
    CRJQ140N65G4Z650V21A112140341540TO-247
    CRJQ145N65G4FZ650V21A120145321380TO-247
    CRJQ185N65G4M650V16A142185251180TO-247
    CRJQ180N65G2650V20A145180361114TO-247
    CRJQ185N65G4Z650V17A150185251150TO-247
    CRJQ190N65G4MF650V16A155190241070TO-247
    CRJQ190N65G4F650V16A160190241030TO-247
    CRJQ190N65GC650V20A160190491788TO-247
    CRJQ190N65G2BF650V19A165190361100TO-247
    CRJQ190N65GCF650V20A185210411459TO-247

    42 part numbers share the same 650 / TO-247 / N rating — sorted by rds(on) typ; first 40 shown.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJQ33N65G2BF an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 650 V.

    Can the CRJQ33N65G2BF be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJQ33N65G2BF?

    VGS(th) is specified between 3.2 and 4.6 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJQ33N65G2BF need?

    Qg is 207 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJQ33N65G2BF come in?

    TO-247. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 42 part numbers in this rating group?

    All 42 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

    Online message

    Shenzhen Gaorunxin Technology Co., Ltd

    Related Products