CRJQE22N60G4BFZ CR Micro 600V 73A N-Channel MOSFET TO-247D-3
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- 600 V / 73 A continuous drain current, TO-247D-3 package
- Rds(on) 18 mΩ typ, 22 mΩ max at VGS = 10 V
- Qg 190 nC and Ciss 8500 pF
- N-channel, Super Junction process
The CR Micro CRJQE22N60G4BFZ is a 600 V 73 A N-channel MOSFET in a TO-247D-3 package, built on the Super Junction process. On-resistance is 18 mΩ typical and 22 mΩ maximum at a 10 V gate drive; gate charge is 190 nC with 8500 pF input capacitance; threshold voltage spans 3 to 5 V.
Key Specifications
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 73 A |
| Rds(on) @ VGS = 10 V, typ. | 18 mΩ |
| Rds(on) @ VGS = 10 V, max. | 22 mΩ |
| Gate Threshold Voltage (VGS(th)) | 3 – 5 V |
| Total Gate Charge (Qg) | 190 nC |
| Input Capacitance (Ciss) | 8500 pF |
| Channel Polarity | N-channel |
| Process Family | Super Junction |
| Package | TO-247D-3 |
Process Technology
Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.
Applications
Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRJQE22N60G4BFZ an N-channel or P-channel device?
It is N-channel. The drain-source rating is 600 V.
Can the CRJQE22N60G4BFZ be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRJQE22N60G4BFZ?
VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRJQE22N60G4BFZ need?
Qg is 190 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRJQE22N60G4BFZ come in?
TO-247D-3. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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