CRJS60N60G4FZ CR Micro 600V 44A N-Channel MOSFET TO-263
CRJS60N60G4FZ CR Micro 600V 44A N-Channel MOSFET TO-263

CRJS60N60G4FZ CR Micro 600V 44A N-Channel MOSFET TO-263

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pCRJS60N60G4FZ CR Micro 600V 44A N-Channel MOSFET TO-263 — Rds(on) 45 mΩ typ, Qg 78 nC./p
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    At a Glance
    • 600 V / 44 A continuous drain current, TO-263 package
    • Rds(on) 45 mΩ typ, 60 mΩ max at VGS = 10 V
    • Qg 78 nC and Ciss 3470 pF
    • N-channel, Super Junction process

    The CR Micro CRJS60N60G4FZ is a 600 V 44 A N-channel MOSFET in a TO-263 package, built on the Super Junction process. On-resistance is 45 mΩ typical and 60 mΩ maximum at a 10 V gate drive; gate charge is 78 nC with 3470 pF input capacitance; threshold voltage spans 3 to 5 V.

    Key Specifications

    Drain-Source Voltage (VDS)600 V
    Continuous Drain Current (ID)44 A
    Rds(on) @ VGS = 10 V, typ.45 mΩ
    Rds(on) @ VGS = 10 V, max.60 mΩ
    Gate Threshold Voltage (VGS(th))3 – 5 V
    Total Gate Charge (Qg)78 nC
    Input Capacitance (Ciss)3470 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageTO-263

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJS45N60G4FZ600V55A3745934170TO-263
    CRJS50N60G4Z600V48A4150833800TO-263
    CRJS60N60G4FZ600V44A4560783470TO-263
    CRJS74N60G2BF600V39A7077842200TO-263
    CS16N60A0R-G600V16A40050049.32502TO-263
    CS10N60A0R600V10A680900321609TO-263

    6 part numbers share the same 600 / TO-263 / N rating — sorted by rds(on) typ.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJS60N60G4FZ an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 600 V.

    Can the CRJS60N60G4FZ be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJS60N60G4FZ?

    VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJS60N60G4FZ need?

    Qg is 78 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJS60N60G4FZ come in?

    TO-263. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 6 part numbers in this rating group?

    All 6 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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