CRJSH45N65G4FQ CR Micro 650V 62A N-Channel MOSFET T2PAK

The CR Micro CRJSH45N65G4FQ is a 650 V 62 A N-channel MOSFET in a T2PAK package, built on the Super Junction process. On-resistance is 39 mΩ typical and 45 mΩ maximum at a 10 V gate drive; gate charge is 100 nC with 4600 pF input capacitance; threshold voltage spans 3 to 5 V.

Key Specifications

Same-Rating Selection Table

3 part numbers share the same 650 / T2PAK / N rating — sorted by rds(on) typ.

Process Technology

Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

Applications

Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

Selection Notes

• Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
• If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
• For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
• The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

Common Questions

Is the CRJSH45N65G4FQ an N-channel or P-channel device?

It is N-channel. The drain-source rating is 650 V.

Can the CRJSH45N65G4FQ be driven at 4.5 V?

No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

What is the gate threshold voltage of the CRJSH45N65G4FQ?

VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

How much gate charge does the CRJSH45N65G4FQ need?

Qg is 100 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

What package does the CRJSH45N65G4FQ come in?

T2PAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

How do I choose between the 3 part numbers in this rating group?

All 3 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.