CRJT185N65G4Z CR Micro 650V 17A N-Channel MOSFET TO-220AB
CRJT185N65G4Z CR Micro 650V 17A N-Channel MOSFET TO-220AB

CRJT185N65G4Z CR Micro 650V 17A N-Channel MOSFET TO-220AB

Share
pCRJT185N65G4Z CR Micro 650V 17A N-Channel MOSFET TO-220AB — Rds(on) 150 mΩ typ, Qg 25 nC./p
    • Product Details
    • Download
    At a Glance
    • 650 V / 17 A continuous drain current, TO-220AB package
    • Rds(on) 150 mΩ typ, 185 mΩ max at VGS = 10 V
    • Qg 25 nC and Ciss 1150 pF
    • N-channel, Super Junction process

    The CR Micro CRJT185N65G4Z is a 650 V 17 A N-channel MOSFET in a TO-220AB package, built on the Super Junction process. On-resistance is 150 mΩ typical and 185 mΩ maximum at a 10 V gate drive; gate charge is 25 nC with 1150 pF input capacitance; threshold voltage spans 3 to 5 V.

    Key Specifications

    Drain-Source Voltage (VDS)650 V
    Continuous Drain Current (ID)17 A
    Rds(on) @ VGS = 10 V, typ.150 mΩ
    Rds(on) @ VGS = 10 V, max.185 mΩ
    Gate Threshold Voltage (VGS(th))3 – 5 V
    Total Gate Charge (Qg)25 nC
    Input Capacitance (Ciss)1150 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageTO-220AB

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJT99N65G4FZ650V27A8299452000TO-220AB
    CRJT110N65G4FZ650V26A88110431900TO-220AB
    CRJT140N65G4Z650V22A112140341540TO-220AB
    CRJT145N65G4FZ650V22A120145321380TO-220AB
    CRJT185N65G4Z650V17A150185251150TO-220AB
    CRJT190N65G4MF650V16A155190241070TO-220AB
    CRJT240N65G4650V13A19024021930TO-220AB
    CRJT240N65G4F650V13A20024020850TO-220AB
    CRJT290N65G4650V10A24029018800TO-220AB
    CRJT290N65G4F650V10A25529017725TO-220AB

    10 part numbers share the same 650 / TO-220AB / N rating — sorted by rds(on) typ.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJT185N65G4Z an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 650 V.

    Can the CRJT185N65G4Z be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJT185N65G4Z?

    VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJT185N65G4Z need?

    Qg is 25 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJT185N65G4Z come in?

    TO-220AB. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 10 part numbers in this rating group?

    All 10 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

    Online message

    Shenzhen Gaorunxin Technology Co., Ltd

    Related Products