CRJT50N60G4Z CR Micro 600V 48A N-Channel MOSFET TO-220AB
CRJT50N60G4Z CR Micro 600V 48A N-Channel MOSFET TO-220AB

CRJT50N60G4Z CR Micro 600V 48A N-Channel MOSFET TO-220AB

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pCRJT50N60G4Z CR Micro 600V 48A N-Channel MOSFET TO-220AB — Rds(on) 41 mΩ typ, Qg 83 nC./p
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    At a Glance
    • 600 V / 48 A continuous drain current, TO-220AB package
    • Rds(on) 41 mΩ typ, 50 mΩ max at VGS = 10 V
    • Qg 83 nC and Ciss 3800 pF
    • N-channel, Super Junction process

    The CR Micro CRJT50N60G4Z is a 600 V 48 A N-channel MOSFET in a TO-220AB package, built on the Super Junction process. On-resistance is 41 mΩ typical and 50 mΩ maximum at a 10 V gate drive; gate charge is 83 nC with 3800 pF input capacitance; threshold voltage spans 3 to 5 V.

    Key Specifications

    Drain-Source Voltage (VDS)600 V
    Continuous Drain Current (ID)48 A
    Rds(on) @ VGS = 10 V, typ.41 mΩ
    Rds(on) @ VGS = 10 V, max.50 mΩ
    Gate Threshold Voltage (VGS(th))3 – 5 V
    Total Gate Charge (Qg)83 nC
    Input Capacitance (Ciss)3800 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageTO-220AB

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJT45N60G4FZ600V55A3745934170TO-220AB
    CRJT50N60G4Z600V48A4150833800TO-220AB

    2 part numbers share the same 600 / TO-220AB / N rating — sorted by rds(on) typ.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJT50N60G4Z an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 600 V.

    Can the CRJT50N60G4Z be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJT50N60G4Z?

    VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJT50N60G4Z need?

    Qg is 83 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJT50N60G4Z come in?

    TO-220AB. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 2 part numbers in this rating group?

    All 2 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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