CRJW125N60G2F CR Micro 600V 27A N-Channel MOSFET TO-262
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- 600 V / 27 A continuous drain current, TO-262 package
- Rds(on) 95 mΩ typ, 125 mΩ max at VGS = 10 V
- Qg 46 nC and Ciss 1600 pF
- N-channel, Super Junction process
The CR Micro CRJW125N60G2F is a 600 V 27 A N-channel MOSFET in a TO-262 package, built on the Super Junction process. On-resistance is 95 mΩ typical and 125 mΩ maximum at a 10 V gate drive; gate charge is 46 nC with 1600 pF input capacitance; threshold voltage spans 3.2 to 4.6 V.
Key Specifications
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 27 A |
| Rds(on) @ VGS = 10 V, typ. | 95 mΩ |
| Rds(on) @ VGS = 10 V, max. | 125 mΩ |
| Gate Threshold Voltage (VGS(th)) | 3.2 – 4.6 V |
| Total Gate Charge (Qg) | 46 nC |
| Input Capacitance (Ciss) | 1600 pF |
| Channel Polarity | N-channel |
| Process Family | Super Junction |
| Package | TO-262 |
Process Technology
Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.
Applications
Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRJW125N60G2F an N-channel or P-channel device?
It is N-channel. The drain-source rating is 600 V.
Can the CRJW125N60G2F be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRJW125N60G2F?
VGS(th) is specified between 3.2 and 4.6 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRJW125N60G2F need?
Qg is 46 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRJW125N60G2F come in?
TO-262. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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