CRJZ50N65G4FZ CR Micro 650V 55A N-Channel MOSFET TOLL
CRJZ50N65G4FZ CR Micro 650V 55A N-Channel MOSFET TOLL

CRJZ50N65G4FZ CR Micro 650V 55A N-Channel MOSFET TOLL

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pCRJZ50N65G4FZ CR Micro 650V 55A N-Channel MOSFET TOLL — Rds(on) 41 mΩ typ, Qg 95 nC./p
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    At a Glance
    • 650 V / 55 A continuous drain current, TOLL package
    • Rds(on) 41 mΩ typ, 50 mΩ max at VGS = 10 V
    • Qg 95 nC and Ciss 4450 pF
    • N-channel, Super Junction process

    The CR Micro CRJZ50N65G4FZ is a 650 V 55 A N-channel MOSFET in a TOLL package, built on the Super Junction process. On-resistance is 41 mΩ typical and 50 mΩ maximum at a 10 V gate drive; gate charge is 95 nC with 4450 pF input capacitance; threshold voltage spans 3 to 5 V.

    Key Specifications

    Drain-Source Voltage (VDS)650 V
    Continuous Drain Current (ID)55 A
    Rds(on) @ VGS = 10 V, typ.41 mΩ
    Rds(on) @ VGS = 10 V, max.50 mΩ
    Gate Threshold Voltage (VGS(th))3 – 5 V
    Total Gate Charge (Qg)95 nC
    Input Capacitance (Ciss)4450 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageTOLL

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJZ40N65G4FZ650V58A35401004500TOLL
    CRJZ45N65G4Z650V53A38451004580TOLL
    CRJZ50N65G4BFZ650V50A4050934100TOLL
    CRJZ50N65G4FZ650V55A4150954450TOLL
    CRJZ65N65G4FZ650V38A4665773450TOLL
    CRJZ80N65G4FZ650V32A6880582550TOLL
    CRJZ99N65G4FZ650V27A8299452000TOLL
    CRJZ99N65G2650V28A8599702400TOLL
    CRJZ110N65G4FZ650V25A88110431900TOLL
    CRJZ99N65G2BF650V27A90103701900TOLL
    CRJZ145N65G4FZ650V19A120145321380TOLL
    CRJZ190N65G4F650V16A160190241030TOLL

    12 part numbers share the same 650 / TOLL / N rating — sorted by rds(on) typ.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJZ50N65G4FZ an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 650 V.

    Can the CRJZ50N65G4FZ be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJZ50N65G4FZ?

    VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJZ50N65G4FZ need?

    Qg is 95 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJZ50N65G4FZ come in?

    TOLL. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 12 part numbers in this rating group?

    All 12 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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