CRMD1002D CR Micro 100V 13A Dual MOSFET PDFN5x6D
CRMD1002D CR Micro 100V 13A Dual MOSFET PDFN5x6D

CRMD1002D CR Micro 100V 13A Dual MOSFET PDFN5x6D

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pCRMD1002D CR Micro 100V 13A Dual MOSFET PDFN5x6D — Rds(on) 35 mΩ typ./p
    • Product Details
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    At a Glance
    • 100 V / 13 A continuous drain current, PDFN5x6D package
    • Rds(on) 35 mΩ typ, 42 mΩ max at VGS = 10 V
    • Qg 62.5 nC and Ciss 2447 pF
    • N-channel, dual configuration

    The CR Micro CRMD1002D is a 100 V 13 A N-channel dual MOSFET in a PDFN5x6D package. The package carries two independent N-channel dies. On-resistance is 35 mΩ typical and 42 mΩ maximum at a 10 V gate drive; 38 mΩ typical at 4.5 V, so it also works from a logic-level driver; threshold voltage spans 1 to 2 V.

    Key Specifications

    Drain-Source Voltage (VDS)100 V
    Continuous Drain Current (ID)13 A
    Circuit Configurationdual
    Rds(on) @ VGS = 10 V, typ.35 mΩ
    Rds(on) @ VGS = 10 V, max.42 mΩ
    Rds(on) @ VGS = 4.5 V, typ.38 mΩ
    Gate Threshold Voltage (VGS(th))1 – 2 V
    Total Gate Charge (Qg)62.5 nC
    Input Capacitance (Ciss)2447 pF
    Channel PolarityN-channel
    PackagePDFN5x6D

    Same-Rating Selection Table

    Part NumberVDSIDConfigRds 10V typRds 4.5V typQgPackage
    CRMD1004D100V25Adual9.51225.9PDFN5x6D
    CRMD1004D100V25Adual9.51225.9PDFN5x6D
    CRMD1002D100V13Adual353862.5PDFN5x6D
    CRMD1002D100V13Adual353862.5PDFN5x6D

    4 part numbers share the same 100 / PDFN5x6D / dual rating — sorted by config.

    Applications

    Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.

    Selection Notes

    • The two dies share a package but not a thermal path. Check whether the configuration is complementary, dual, common drain or series before wiring it into a topology.
    • In complementary parts the N and P dies have different Rds(on) and Qg. Match the drive separately rather than assuming symmetry.
    • Common-drain parts suit load switch and battery protection circuits where the two sources tie together — the body diodes then oppose each other and block in both directions.
    • Because both dies sit on one leadframe, total dissipation is limited by the package, not by the individual die ratings.

    Common Questions

    Is the CRMD1002D an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 100 V.

    Can the CRMD1002D be driven from a 4.5 V logic-level gate signal?

    Yes. The datasheet characterises Rds(on) at 4.5 V: 38 mΩ typical and 45.6 mΩ maximum.

    What is the gate threshold voltage of the CRMD1002D?

    VGS(th) is specified between 1 and 2 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    What package does the CRMD1002D come in?

    PDFN5x6D. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 4 part numbers in this rating group?

    All 4 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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