
The CR Micro CRMM6602C is a 30 V 5 A N-channel complementary MOSFET in a SOT-23-6 package. One N-channel and one P-channel die share the package. On-resistance is 25 mΩ typical and 30 mΩ maximum at a 10 V gate drive; 35 mΩ typical at 4.5 V, so it also works from a logic-level driver; threshold voltage spans 1 to 2 V.
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 5 A |
| Circuit Configuration | Complementary |
| Rds(on) @ VGS = 10 V, typ. | 25 mΩ |
| Rds(on) @ VGS = 10 V, max. | 30 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 35 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1 – 2 V |
| Total Gate Charge (Qg) | 10.3 nC |
| Input Capacitance (Ciss) | 423 pF |
| Channel Polarity | N-channel |
| Package | SOT-23-6 |
Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.
Is the CRMM6602C an N-channel or P-channel device?
It is N-channel. The drain-source rating is 30 V.
Can the CRMM6602C be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 35 mΩ typical and 42 mΩ maximum.
What is the gate threshold voltage of the CRMM6602C?
VGS(th) is specified between 1 and 2 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
What package does the CRMM6602C come in?
SOT-23-6. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd