CRSD090N12N CR Micro 120V 80A N-Channel MOSFET TO-252 or DPAK
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- 120 V / 80 A continuous drain current, TO-252 or DPAK package
- Rds(on) 7.8 mΩ typ, 9 mΩ max at VGS = 10 V
- Qg 51 nC and Ciss 3517 pF
- N-channel, SGT process
The CR Micro CRSD090N12N is a 120 V 80 A N-channel MOSFET in a TO-252 or DPAK package, built on the SGT process. On-resistance is 7.8 mΩ typical and 9 mΩ maximum at a 10 V gate drive; gate charge is 51 nC with 3517 pF input capacitance; threshold voltage spans 2 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) | 80 A |
| Rds(on) @ VGS = 10 V, typ. | 7.8 mΩ |
| Rds(on) @ VGS = 10 V, max. | 9 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 51 nC |
| Input Capacitance (Ciss) | 3517 pF |
| Channel Polarity | N-channel |
| Process Family | SGT |
| Package | TO-252 or DPAK |
Process Technology
SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.
Applications
Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRSD090N12N an N-channel or P-channel device?
It is N-channel. The drain-source rating is 120 V.
Can the CRSD090N12N be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRSD090N12N?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRSD090N12N need?
Qg is 51 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRSD090N12N come in?
TO-252 or DPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
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