CRSQ038N15N3Z CR Micro 150V 210A N-Channel MOSFET TO-247
CRSQ038N15N3Z CR Micro 150V 210A N-Channel MOSFET TO-247

CRSQ038N15N3Z CR Micro 150V 210A N-Channel MOSFET TO-247

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pCRSQ038N15N3Z CR Micro 150V 210A N-Channel MOSFET TO-247 — Rds(on) 3.2 mΩ typ, Qg 169.6 nC./p
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    At a Glance
    • 150 V / 210 A continuous drain current, TO-247 package
    • Rds(on) 3.2 mΩ typ, 3.8 mΩ max at VGS = 10 V
    • Qg 169.6 nC and Ciss 11107 pF
    • N-channel, SGT process

    The CR Micro CRSQ038N15N3Z is a 150 V 210 A N-channel MOSFET in a TO-247 package, built on the SGT process. On-resistance is 3.2 mΩ typical and 3.8 mΩ maximum at a 10 V gate drive; gate charge is 169.6 nC with 11107 pF input capacitance; threshold voltage spans 2.3 to 4.3 V.

    Key Specifications

    Drain-Source Voltage (VDS)150 V
    Continuous Drain Current (ID)210 A
    Rds(on) @ VGS = 10 V, typ.3.2 mΩ
    Rds(on) @ VGS = 10 V, max.3.8 mΩ
    Gate Threshold Voltage (VGS(th))2.3 – 4.3 V
    Total Gate Charge (Qg)169.6 nC
    Input Capacitance (Ciss)11107 pF
    Channel PolarityN-channel
    Process FamilySGT
    PackageTO-247

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRSQ032N15N3DZ150V140A2.83.2157.810091TO-247
    CRSQ038N15N3Z150V210A3.23.8169.611107TO-247
    CRSQ052N15N3Z150V160A4.25.277.95643TO-247
    CRSQ073N15N150V140A6.27.3755426.7TO-247
    CRSQ073N15NZ150V140A6.27.374.54936TO-247

    5 part numbers share the same 150 / TO-247 / N rating — sorted by rds(on) typ.

    Process Technology

    SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.

    Applications

    Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRSQ038N15N3Z an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 150 V.

    Can the CRSQ038N15N3Z be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRSQ038N15N3Z?

    VGS(th) is specified between 2.3 and 4.3 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRSQ038N15N3Z need?

    Qg is 169.6 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRSQ038N15N3Z come in?

    TO-247. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 5 part numbers in this rating group?

    All 5 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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