CRST033N08N CR Micro 85V 160A N-Channel MOSFET TO-220
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- 85 V / 160 A continuous drain current, TO-220 package
- Rds(on) 2.5 mΩ typ, 3 mΩ max at VGS = 10 V
- Qg 130 nC and Ciss 8930 pF
- N-channel, SGT process
The CR Micro CRST033N08N is a 85 V 160 A N-channel MOSFET in a TO-220 package, built on the SGT process. On-resistance is 2.5 mΩ typical and 3 mΩ maximum at a 10 V gate drive; gate charge is 130 nC with 8930 pF input capacitance; threshold voltage spans 2 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 85 V |
| Continuous Drain Current (ID) | 160 A |
| Rds(on) @ VGS = 10 V, typ. | 2.5 mΩ |
| Rds(on) @ VGS = 10 V, max. | 3 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 130 nC |
| Input Capacitance (Ciss) | 8930 pF |
| Channel Polarity | N-channel |
| Process Family | SGT |
| Package | TO-220 |
Same-Rating Selection Table
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRST025N08N | 85V | 180A | 2 | 2.4 | 217 | 12191 | TO-220 |
| CRST033N08N | 85V | 160A | 2.5 | 3 | 130 | 8930 | TO-220 |
| CRST041N08N | 85V | 120A | 3.4 | 4.1 | 74 | 6050 | TO-220 |
| CRST049N08N | 85V | 120A | 4.1 | 4.9 | 64 | 4207 | TO-220 |
| CRST055N08N | 85V | 120A | 4.6 | 5.5 | 55 | 3086 | TO-220 |
| CRST056N08N5 | 85V | 110A | 4.8 | 5.6 | 54 | 3638 | TO-220 |
| CRST065N08N | 85V | 80A | 5.6 | 6.5 | 47 | 2860 | TO-220 |
| CS120N08A8 | 85V | 120A | 6 | 7.5 | 74.4 | 4572 | TO-220 |
8 part numbers share the same 85 / TO-220 / N rating — sorted by rds(on) typ.
Process Technology
SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.
Applications
Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRST033N08N an N-channel or P-channel device?
It is N-channel. The drain-source rating is 85 V.
Can the CRST033N08N be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRST033N08N?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRST033N08N need?
Qg is 130 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRST033N08N come in?
TO-220. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 8 part numbers in this rating group?
All 8 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
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