
The CR Micro CRST128N10L2 is a 100 V 60 A N-channel MOSFET in a TO-220 package, built on the SGT process. On-resistance is 11.4 mΩ typical and 13.7 mΩ maximum at a 10 V gate drive; 14.6 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 28 nC with 1618 pF input capacitance; threshold voltage spans 1.4 to 2.2 V.
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 60 A |
| Rds(on) @ VGS = 10 V, typ. | 11.4 mΩ |
| Rds(on) @ VGS = 10 V, max. | 13.7 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 14.6 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 18.3 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.4 – 2.2 V |
| Total Gate Charge (Qg) | 28 nC |
| Input Capacitance (Ciss) | 1618 pF |
| Channel Polarity | N-channel |
| Process Family | SGT |
| Package | TO-220 |
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRST024N10N3Z | 100V | 180A | 2 | 2.4 | 238 | 12865 | TO-220 |
| CRST024N10N4 | 100V | 180A | 2.1 | 2.5 | 154.4 | 11347 | TO-220 |
| CRST024N10N4Z | 100V | 180A | 2.1 | 2.5 | 154 | 11347 | TO-220 |
| CRST030N10N | 100V | 180A | 2.5 | 3 | 169 | 11355 | TO-220 |
| CRST030N10NZ | 100V | 180A | 2.5 | 3 | 169 | 11355 | TO-220 |
| CRST030N10N3Z | 100V | 180A | 2.6 | 3 | 149.1 | 8487 | TO-220 |
| CRST037N10N | 100V | 120A | 3 | 3.7 | 139 | 9538 | TO-220 |
| CRST037N10N3 | 100V | 160A | 3 | 3.7 | 140 | 7217 | TO-220 |
| CRST040N10N | 100V | 120A | 3.3 | 4 | 117 | 6920 | TO-220 |
| CRST040N10N3 | 100V | 140A | 3.4 | 4.0 | 53 | 6235 | TO-220 |
| CRST045N10N | 100V | 120A | 3.6 | 4.5 | 90 | 6722 | TO-220 |
| CRST045N10N3 | 100V | 160A | 3.6 | 4.5 | 89.7 | 5741 | TO-220 |
| CRTT055N10N | 100V | 159A | 4.1 | 5.5 | 175 | 7530 | TO-220 |
| CS180N10A8 | 100V | 180A | 4.1 | 4.9 | 189 | 9251 | TO-220 |
| CRST052N10N3 | 100V | 130A | 4.4 | 5.2 | 82.8 | 4475 | TO-220 |
| CRST049N10N3 | 100V | 120A | 4.5 | 5.2 | 73 | 4900 | TO-220 |
| CRTT067N10N | 100V | 147A | 5.2 | 6.7 | 135 | 5779 | TO-220 |
| CRST060N10N | 100V | 120A | 5.3 | 6 | 68.5 | 4429 | TO-220 |
| CRTT095N10N | 100V | 130A | 6.2 | 9.5 | 168 | 8000 | TO-220 |
| CRTT088N10N | 100V | 101A | 6.4 | 8.8 | 106 | 4892 | TO-220 |
| CRST074N10L2 | 100V | 80A | 6.8 | 8.2 | 44.5 | 2626 | TO-220 |
| CS120N10A8 | 100V | 120A | 7.5 | 9.5 | 108 | 5267 | TO-220 |
| CRST128N10L2 | 100V | 60A | 11.4 | 13.7 | 28 | 1618 | TO-220 |
| CRST130N10L4Z | 100V | 50A | 12 | 14.4 | 18.7 | 1050 | TO-220 |
| CRST160N10N3 | 100V | 60A | 13 | 16 | 25.2 | 1316 | TO-220 |
| CS3710B8 | 100V | 57A | 14 | 23 | 72 | 4563 | TO-220 |
| CS540A8 | 100V | 33A | 30 | 44 | 37 | 2700 | TO-220 |
27 part numbers share the same 100 / TO-220 / N rating — sorted by rds(on) typ.
SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.
Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.
Is the CRST128N10L2 an N-channel or P-channel device?
It is N-channel. The drain-source rating is 100 V.
Can the CRST128N10L2 be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 14.6 mΩ typical and 18.3 mΩ maximum.
What is the gate threshold voltage of the CRST128N10L2?
VGS(th) is specified between 1.4 and 2.2 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRST128N10L2 need?
Qg is 28 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRST128N10L2 come in?
TO-220. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 27 part numbers in this rating group?
All 27 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd