CRSZT016N10N4Q CR Micro 100V 370A N-Channel MOSFET TOLT
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- 100 V / 370 A continuous drain current, TOLT package
- Rds(on) 1.2 mΩ typ, 1.6 mΩ max at VGS = 10 V
- Qg 193 nC and Ciss 13087 pF
- N-channel, SGT process
The CR Micro CRSZT016N10N4Q is a 100 V 370 A N-channel MOSFET in a TOLT package, built on the SGT process. On-resistance is 1.2 mΩ typical and 1.6 mΩ maximum at a 10 V gate drive; gate charge is 193 nC with 13087 pF input capacitance; threshold voltage spans 2 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 370 A |
| Rds(on) @ VGS = 10 V, typ. | 1.2 mΩ |
| Rds(on) @ VGS = 10 V, max. | 1.6 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 193 nC |
| Input Capacitance (Ciss) | 13087 pF |
| Channel Polarity | N-channel |
| Process Family | SGT |
| Package | TOLT |
Process Technology
SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.
Applications
Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRSZT016N10N4Q an N-channel or P-channel device?
It is N-channel. The drain-source rating is 100 V.
Can the CRSZT016N10N4Q be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRSZT016N10N4Q?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRSZT016N10N4Q need?
Qg is 193 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRSZT016N10N4Q come in?
TOLT. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
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