CRTB550P06N2-G CR Micro -60V -6A P-Channel MOSFET SOT-223
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- -60 V / -6 A continuous drain current, SOT-223 package
- Rds(on) 44 mΩ typ, 55 mΩ max at VGS = 10 V
- Qg 41.2 nC and Ciss 2667 pF
- P-channel, Trench process
The CR Micro CRTB550P06N2-G is a -60 V -6 A P-channel MOSFET in a SOT-223 package, built on the Trench process. On-resistance is 44 mΩ typical and 55 mΩ maximum at a 10 V gate drive; gate charge is 41.2 nC with 2667 pF input capacitance; threshold voltage spans -1.5 to -3.5 V.
Key Specifications
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) | -6 A |
| Rds(on) @ VGS = 10 V, typ. | 44 mΩ |
| Rds(on) @ VGS = 10 V, max. | 55 mΩ |
| Gate Threshold Voltage (VGS(th)) | -1.5 – -3.5 V |
| Total Gate Charge (Qg) | 41.2 nC |
| Input Capacitance (Ciss) | 2667 pF |
| Channel Polarity | P-channel |
| Process Family | Trench |
| Package | SOT-223 |
Process Technology
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Applications
Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRTB550P06N2-G an N-channel or P-channel device?
It is P-channel. The drain-source rating is -60 V.
Can the CRTB550P06N2-G be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRTB550P06N2-G?
VGS(th) is specified between -1.5 and -3.5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRTB550P06N2-G need?
Qg is 41.2 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRTB550P06N2-G come in?
SOT-223. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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