CRTD14DP15L2Z CR Micro -150V -23A P-Channel MOSFET TO-252 or DPAK
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- -150 V / -23 A continuous drain current, TO-252 or DPAK package
- Rds(on) 97 mΩ typ, 126 mΩ max at VGS = 10 V
- Qg 110 nC and Ciss 5110 pF
- P-channel, Trench process
The CR Micro CRTD14DP15L2Z is a -150 V -23 A P-channel MOSFET in a TO-252 or DPAK package, built on the Trench process. On-resistance is 97 mΩ typical and 126 mΩ maximum at a 10 V gate drive; gate charge is 110 nC with 5110 pF input capacitance; threshold voltage spans -1.2 to -2.6 V.
Key Specifications
| Drain-Source Voltage (VDS) | -150 V |
| Continuous Drain Current (ID) | -23 A |
| Rds(on) @ VGS = 10 V, typ. | 97 mΩ |
| Rds(on) @ VGS = 10 V, max. | 126 mΩ |
| Gate Threshold Voltage (VGS(th)) | -1.2 – -2.6 V |
| Total Gate Charge (Qg) | 110 nC |
| Input Capacitance (Ciss) | 5110 pF |
| Channel Polarity | P-channel |
| Process Family | Trench |
| Package | TO-252 or DPAK |
Process Technology
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Applications
Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRTD14DP15L2Z an N-channel or P-channel device?
It is P-channel. The drain-source rating is -150 V.
Can the CRTD14DP15L2Z be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRTD14DP15L2Z?
VGS(th) is specified between -1.2 and -2.6 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRTD14DP15L2Z need?
Qg is 110 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRTD14DP15L2Z come in?
TO-252 or DPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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