CRTJ14DN10L CR Micro 100V 4A N-Channel MOSFET SOT-223
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- 100 V / 4 A continuous drain current, SOT-223 package
- Rds(on) 104 mΩ typ, 140 mΩ max at VGS = 10 V
- Qg 10 nC and Ciss 384 pF
- N-channel, Trench process
The CR Micro CRTJ14DN10L is a 100 V 4 A N-channel MOSFET in a SOT-223 package, built on the Trench process. On-resistance is 104 mΩ typical and 140 mΩ maximum at a 10 V gate drive; 110 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 10 nC with 384 pF input capacitance; threshold voltage spans 1.2 to 2.4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 4 A |
| Rds(on) @ VGS = 10 V, typ. | 104 mΩ |
| Rds(on) @ VGS = 10 V, max. | 140 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 110 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 160 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.2 – 2.4 V |
| Total Gate Charge (Qg) | 10 nC |
| Input Capacitance (Ciss) | 384 pF |
| Channel Polarity | N-channel |
| Process Family | Trench |
| Package | SOT-223 |
Process Technology
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Applications
Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRTJ14DN10L an N-channel or P-channel device?
It is N-channel. The drain-source rating is 100 V.
Can the CRTJ14DN10L be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 110 mΩ typical and 160 mΩ maximum.
What is the gate threshold voltage of the CRTJ14DN10L?
VGS(th) is specified between 1.2 and 2.4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRTJ14DN10L need?
Qg is 10 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRTJ14DN10L come in?
SOT-223. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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