CRTJ250N03L2-G CR Micro 30V 5.8A N-Channel MOSFET SOT-23
CRTJ250N03L2-G CR Micro 30V 5.8A N-Channel MOSFET SOT-23

CRTJ250N03L2-G CR Micro 30V 5.8A N-Channel MOSFET SOT-23

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pCRTJ250N03L2-G CR Micro 30V 5.8A N-Channel MOSFET SOT-23 — Rds(on) 23 mΩ typ, Qg 7.12 nC./p
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    At a Glance
    • 30 V / 5.8 A continuous drain current, SOT-23 package
    • Rds(on) 23 mΩ typ, 28 mΩ max at VGS = 10 V
    • Qg 7.12 nC and Ciss 363 pF
    • N-channel, Trench process

    The CR Micro CRTJ250N03L2-G is a 30 V 5.8 A N-channel MOSFET in a SOT-23 package, built on the Trench process. On-resistance is 23 mΩ typical and 28 mΩ maximum at a 10 V gate drive; 34 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 7.12 nC with 363 pF input capacitance; threshold voltage spans 1 to 2 V.

    Key Specifications

    Drain-Source Voltage (VDS)30 V
    Continuous Drain Current (ID)5.8 A
    Rds(on) @ VGS = 10 V, typ.23 mΩ
    Rds(on) @ VGS = 10 V, max.28 mΩ
    Rds(on) @ VGS = 4.5 V, typ.34 mΩ
    Rds(on) @ VGS = 4.5 V, max.44 mΩ
    Gate Threshold Voltage (VGS(th))1 – 2 V
    Total Gate Charge (Qg)7.12 nC
    Input Capacitance (Ciss)363 pF
    Channel PolarityN-channel
    Process FamilyTrench
    PackageSOT-23

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRTJ250N03L2-G30V5.8A23287.12363SOT-23
    CRTJ320N03S2-G30V6A23294.2372SOT-23

    2 part numbers share the same 30 / SOT-23 / N rating — sorted by rds(on) typ.

    Process Technology

    Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.

    Applications

    Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRTJ250N03L2-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 30 V.

    Can the CRTJ250N03L2-G be driven from a 4.5 V logic-level gate signal?

    Yes. The datasheet characterises Rds(on) at 4.5 V: 34 mΩ typical and 44 mΩ maximum.

    What is the gate threshold voltage of the CRTJ250N03L2-G?

    VGS(th) is specified between 1 and 2 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRTJ250N03L2-G need?

    Qg is 7.12 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRTJ250N03L2-G come in?

    SOT-23. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 2 part numbers in this rating group?

    All 2 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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