
The CR Micro CRTM105N06L is a 60 V 56 A N-channel MOSFET in a PDFN5×6 package, built on the Trench process. On-resistance is 8 mΩ typical and 10.5 mΩ maximum at a 10 V gate drive; 10 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 46 nC with 1902 pF input capacitance; threshold voltage spans 1.3 to 2.3 V.
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 56 A |
| Rds(on) @ VGS = 10 V, typ. | 8 mΩ |
| Rds(on) @ VGS = 10 V, max. | 10.5 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 10 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 12.5 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.3 – 2.3 V |
| Total Gate Charge (Qg) | 46 nC |
| Input Capacitance (Ciss) | 1902 pF |
| Channel Polarity | N-channel |
| Process Family | Trench |
| Package | PDFN5×6 |
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRSM013N06N4Z | 60V | 260A | 1.1 | 1.39 | 102.6 | 7291 | PDFN5×6 |
| CRSM019N06N4Z | 60V | 80A | 1.55 | 1.98 | 104.8 | 7124 | PDFN5×6 |
| CRSM028N06N4Z | 60V | 80A | 2.3 | 2.8 | 60.4 | 3971 | PDFN5×6 |
| CRSM024N06L2 | 60V | 80A | 2.4 | 2.9 | 74 | 4610 | PDFN5×6 |
| CRSM024N06L2Z | 60V | 80A | 2.4 | 2.9 | 74 | 4610 | PDFN5×6 |
| CRSM034N06N4Z | 60V | 80A | 2.6 | 3.4 | 47.6 | 3031 | PDFN5×6 |
| CRSM034N06L2 | 60V | 80A | 2.8 | 3.4 | 54 | 3224 | PDFN5×6 |
| CRSM034N06L2Z | 60V | 80A | 2.8 | 3.4 | 54 | 3734 | PDFN5×6 |
| CRSM060N06L2 | 60V | 60A | 5.3 | 6.4 | 28 | 1666 | PDFN5×6 |
| CS60N06AQ3 | 60V | 60A | 7 | 10 | 88.8 | 4398 | PDFN5×6 |
| HGQ09N06A | 60V | 50A | 7.9 | 9.8 | 18 | 1226 | PDFN5×6 |
| CRTM105N06L | 60V | 56A | 8 | 10.5 | 46 | 1902 | PDFN5×6 |
| CRSM120N06L2Q | 60V | 40A | 10 | 13 | 16 | 960 | PDFN5×6 |
| CS55N06AQ3-G | 60V | 55A | 11 | 14 | 50.7 | 2370 | PDFN5×6 |
| CRSM260N06LDQ | 60V | 20A | 22 | 26 | 10 | 660 | PDFN5×6 |
15 part numbers share the same 60 / PDFN5×6 / N rating — sorted by rds(on) typ.
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.
Is the CRTM105N06L an N-channel or P-channel device?
It is N-channel. The drain-source rating is 60 V.
Can the CRTM105N06L be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 10 mΩ typical and 12.5 mΩ maximum.
What is the gate threshold voltage of the CRTM105N06L?
VGS(th) is specified between 1.3 and 2.3 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRTM105N06L need?
Qg is 46 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRTM105N06L come in?
PDFN5×6. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 15 part numbers in this rating group?
All 15 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd