CRTM900P10LQ CR Micro -100V -17A P-Channel MOSFET PDFN5×6
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- -100 V / -17 A continuous drain current, PDFN5×6 package
- Rds(on) 74 mΩ typ, 90 mΩ max at VGS = 10 V
- Qg 50 nC and Ciss 2770 pF
- P-channel, Trench process
The CR Micro CRTM900P10LQ is a -100 V -17 A P-channel MOSFET in a PDFN5×6 package, built on the Trench process. On-resistance is 74 mΩ typical and 90 mΩ maximum at a 10 V gate drive; 84 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 50 nC with 2770 pF input capacitance; threshold voltage spans -1.5 to -2.4 V.
Key Specifications
| Drain-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (ID) | -17 A |
| Rds(on) @ VGS = 10 V, typ. | 74 mΩ |
| Rds(on) @ VGS = 10 V, max. | 90 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 84 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 120 mΩ |
| Gate Threshold Voltage (VGS(th)) | -1.5 – -2.4 V |
| Total Gate Charge (Qg) | 50 nC |
| Input Capacitance (Ciss) | 2770 pF |
| Channel Polarity | P-channel |
| Process Family | Trench |
| Package | PDFN5×6 |
Process Technology
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Applications
Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRTM900P10LQ an N-channel or P-channel device?
It is P-channel. The drain-source rating is -100 V.
Can the CRTM900P10LQ be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 84 mΩ typical and 120 mΩ maximum.
What is the gate threshold voltage of the CRTM900P10LQ?
VGS(th) is specified between -1.5 and -2.4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRTM900P10LQ need?
Qg is 50 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRTM900P10LQ come in?
PDFN5×6. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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