CRTS045N06N CR Micro 60V 120A N-Channel MOSFET TO-263 or D2PAK
CRTS045N06N CR Micro 60V 120A N-Channel MOSFET TO-263 or D2PAK

CRTS045N06N CR Micro 60V 120A N-Channel MOSFET TO-263 or D2PAK

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pCRTS045N06N CR Micro 60V 120A N-Channel MOSFET TO-263 or D2PAK — Rds(on) 3.3 mΩ typ, Qg 110 nC./p
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    At a Glance
    • 60 V / 120 A continuous drain current, TO-263 or D2PAK package
    • Rds(on) 3.3 mΩ typ, 4.5 mΩ max at VGS = 10 V
    • Qg 110 nC and Ciss 4531 pF
    • N-channel, Trench process

    The CR Micro CRTS045N06N is a 60 V 120 A N-channel MOSFET in a TO-263 or D2PAK package, built on the Trench process. On-resistance is 3.3 mΩ typical and 4.5 mΩ maximum at a 10 V gate drive; gate charge is 110 nC with 4531 pF input capacitance; threshold voltage spans 2.4 to 3.6 V.

    Key Specifications

    Drain-Source Voltage (VDS)60 V
    Continuous Drain Current (ID)120 A
    Rds(on) @ VGS = 10 V, typ.3.3 mΩ
    Rds(on) @ VGS = 10 V, max.4.5 mΩ
    Gate Threshold Voltage (VGS(th))2.4 – 3.6 V
    Total Gate Charge (Qg)110 nC
    Input Capacitance (Ciss)4531 pF
    Channel PolarityN-channel
    Process FamilyTrench
    PackageTO-263 or D2PAK

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRSS020N06N4Z60V180A1.82.3102.36717TO-263 or D2PAK
    CRTS029N06N60V160A1.92.91837830TO-263 or D2PAK
    CS240N06A060V240A2.53163.87902TO-263 or D2PAK
    CS180N06A060V180A3.2486.24882TO-263 or D2PAK
    CRTS045N06N60V120A3.34.51104531TO-263 or D2PAK

    5 part numbers share the same 60 / TO-263 or D2PAK / N rating — sorted by rds(on) typ.

    Process Technology

    Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.

    Applications

    Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRTS045N06N an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 60 V.

    Can the CRTS045N06N be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRTS045N06N?

    VGS(th) is specified between 2.4 and 3.6 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRTS045N06N need?

    Qg is 110 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRTS045N06N come in?

    TO-263 or D2PAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 5 part numbers in this rating group?

    All 5 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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