
The CR Micro CRTS088N10N is a 100 V 101 A N-channel MOSFET in a TO-263 or D2PAK package, built on the Trench process. On-resistance is 6.2 mΩ typical and 8.8 mΩ maximum at a 10 V gate drive; gate charge is 106 nC with 4892 pF input capacitance; threshold voltage spans 2.4 to 3.6 V.
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 101 A |
| Rds(on) @ VGS = 10 V, typ. | 6.2 mΩ |
| Rds(on) @ VGS = 10 V, max. | 8.8 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.4 – 3.6 V |
| Total Gate Charge (Qg) | 106 nC |
| Input Capacitance (Ciss) | 4892 pF |
| Channel Polarity | N-channel |
| Process Family | Trench |
| Package | TO-263 or D2PAK |
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRSS022N10N3Z | 100V | 180A | 1.8 | 2.2 | 238 | 12865 | TO-263 or D2PAK |
| CRSS022N10N4 | 100V | 253A | 2 | 2.4 | 154 | 20000 | TO-263 or D2PAK |
| CRSS028N10N | 100V | 180A | 2.3 | 2.8 | 169 | 11355 | TO-263 or D2PAK |
| CRSS028N10NZ | 100V | 180A | 2.3 | 2.8 | 169 | 11355 | TO-263 or D2PAK |
| CRSS028N10N3Z | 100V | 180A | 2.4 | 2.8 | 149.1 | 8487 | TO-263 or D2PAK |
| CRSS035N10N3 | 100V | 160A | 2.8 | 3.5 | 140 | 7217 | TO-263 or D2PAK |
| CRSS037N10N | 100V | 120A | 3 | 3.7 | 117 | 6920 | TO-263 or D2PAK |
| CRSS038N10N3 | 100V | 140A | 3.2 | 3.8 | 53 | 6235 | TO-263 or D2PAK |
| CRSS042N10N | 100V | 120A | 3.4 | 4.2 | 90 | 6722 | TO-263 or D2PAK |
| CRSS042N10N3 | 100V | 160A | 3.6 | 4.5 | 89.7 | 5741 | TO-263 or D2PAK |
| CS180N10A0 | 100V | 180A | 4.1 | 4.9 | 189 | 9251 | TO-263 or D2PAK |
| CRSS050N10N3 | 100V | 130A | 4.2 | 5 | 82.8 | 4475 | TO-263 or D2PAK |
| CRSS049N10N3 | 100V | 140A | 4.4 | 5.2 | 73 | 4900 | TO-263 or D2PAK |
| CRSS053N10N3 | 100V | 120A | 4.5 | 5.3 | 67.2 | 3826 | TO-263 or D2PAK |
| CRSS057N10N | 100V | 120A | 5 | 5.7 | 68.5 | 4429 | TO-263 or D2PAK |
| CRTS088N10N | 100V | 101A | 6.2 | 8.8 | 106 | 4892 | TO-263 or D2PAK |
| CRTS095N10N | 100V | 130A | 6.2 | 9.5 | 168 | 8000 | TO-263 or D2PAK |
| CRTS105N10N | 100V | 150A | 8.6 | 10.5 | 146 | 9023 | TO-263 or D2PAK |
18 part numbers share the same 100 / TO-263 or D2PAK / N rating — sorted by rds(on) typ.
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.
Is the CRTS088N10N an N-channel or P-channel device?
It is N-channel. The drain-source rating is 100 V.
Can the CRTS088N10N be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRTS088N10N?
VGS(th) is specified between 2.4 and 3.6 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRTS088N10N need?
Qg is 106 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRTS088N10N come in?
TO-263 or D2PAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 18 part numbers in this rating group?
All 18 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd