CRTS240N20NZ CR Micro 200V 63A N-Channel MOSFET TO263 or D2PAK
CRTS240N20NZ CR Micro 200V 63A N-Channel MOSFET TO263 or D2PAK

CRTS240N20NZ CR Micro 200V 63A N-Channel MOSFET TO263 or D2PAK

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pCRTS240N20NZ CR Micro 200V 63A N-Channel MOSFET TO263 or D2PAK — Rds(on) 21 mΩ typ, Qg 78 nC./p
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    At a Glance
    • 200 V / 63 A continuous drain current, TO263 or D2PAK package
    • Rds(on) 21 mΩ typ, 26 mΩ max at VGS = 10 V
    • Qg 78 nC and Ciss 4347 pF
    • N-channel, Trench process

    The CR Micro CRTS240N20NZ is a 200 V 63 A N-channel MOSFET in a TO263 or D2PAK package, built on the Trench process. On-resistance is 21 mΩ typical and 26 mΩ maximum at a 10 V gate drive; gate charge is 78 nC with 4347 pF input capacitance; threshold voltage spans 3 to 5 V.

    Key Specifications

    Drain-Source Voltage (VDS)200 V
    Continuous Drain Current (ID)63 A
    Rds(on) @ VGS = 10 V, typ.21 mΩ
    Rds(on) @ VGS = 10 V, max.26 mΩ
    Gate Threshold Voltage (VGS(th))3 – 5 V
    Total Gate Charge (Qg)78 nC
    Input Capacitance (Ciss)4347 pF
    Channel PolarityN-channel
    Process FamilyTrench
    PackageTO263 or D2PAK

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRTS240N20N200V63A2126784347TO263 or D2PAK
    CRTS240N20NZ200V63A2126784347TO263 or D2PAK

    2 part numbers share the same 200 / TO263 or D2PAK / N rating — sorted by rds(on) typ.

    Process Technology

    Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.

    Applications

    Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRTS240N20NZ an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 200 V.

    Can the CRTS240N20NZ be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRTS240N20NZ?

    VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRTS240N20NZ need?

    Qg is 78 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRTS240N20NZ come in?

    TO263 or D2PAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 2 part numbers in this rating group?

    All 2 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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