CRTT150N15N CR Micro 150V 93A N-Channel MOSFET TO-220
CRTT150N15N CR Micro 150V 93A N-Channel MOSFET TO-220

CRTT150N15N CR Micro 150V 93A N-Channel MOSFET TO-220

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pCRTT150N15N CR Micro 150V 93A N-Channel MOSFET TO-220 — Rds(on) 10 mΩ typ, Qg 69 nC./p
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    At a Glance
    • 150 V / 93 A continuous drain current, TO-220 package
    • Rds(on) 10 mΩ typ, 15 mΩ max at VGS = 10 V
    • Qg 69 nC and Ciss 3593 pF
    • N-channel, Trench process

    The CR Micro CRTT150N15N is a 150 V 93 A N-channel MOSFET in a TO-220 package, built on the Trench process. On-resistance is 10 mΩ typical and 15 mΩ maximum at a 10 V gate drive; gate charge is 69 nC with 3593 pF input capacitance; threshold voltage spans 3 to 5 V.

    Key Specifications

    Drain-Source Voltage (VDS)150 V
    Continuous Drain Current (ID)93 A
    Rds(on) @ VGS = 10 V, typ.10 mΩ
    Rds(on) @ VGS = 10 V, max.15 mΩ
    Gate Threshold Voltage (VGS(th))3 – 5 V
    Total Gate Charge (Qg)69 nC
    Input Capacitance (Ciss)3593 pF
    Channel PolarityN-channel
    Process FamilyTrench
    PackageTO-220

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRST052N15N3Z150V160A45.273.85096TO-220
    CRST052N15N3Q150V180A4.35.272.95110TO-220
    CRST073N15N150V120A6.27.3795416TO-220
    CRST073N15NZ150V141A6.27.3795416TO-220
    CRST073N15NZ-Q150V145A6.27.3795403TO-220
    CRST085N15N150V120A78.5634214TO-220
    CS105N15A8150V105A9.612137.67400TO-220
    CRTT150N15N150V93A1015693593TO-220

    8 part numbers share the same 150 / TO-220 / N rating — sorted by rds(on) typ.

    Process Technology

    Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.

    Applications

    Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRTT150N15N an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 150 V.

    Can the CRTT150N15N be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRTT150N15N?

    VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRTT150N15N need?

    Qg is 69 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRTT150N15N come in?

    TO-220. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 8 part numbers in this rating group?

    All 8 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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