CRXH160M075G3 CR Micro 800V 20A SiC MOSFET TO-251
CRXH160M075G3 CR Micro 800V 20A SiC MOSFET TO-251

CRXH160M075G3 CR Micro 800V 20A SiC MOSFET TO-251

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pCRXH160M075G3 CR Micro 800V 20A SiC MOSFET TO-251 — Rds(on) 220 mΩ typ, Qg 20 nC./p
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    At a Glance
    • 800 V / 20 A continuous drain current, TO-251 package
    • Rds(on) 220 mΩ typ, 320 mΩ max at VGS = 15 V
    • Qg 20 nC and Ciss 399 pF
    • N-channel silicon carbide, 4H-SiC

    The CR Micro CRXH160M075G3 is a 800 V 20 A N-channel silicon carbide MOSFET in a TO-251 package. 220 mΩ typical at a 15 V gate drive (320 mΩ maximum); 160 mΩ typical at 18 V; Qg is 20 nC; VGS(th) 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)800 V
    Continuous Drain Current (ID)20 A
    Rds(on) @ VGS = 15 V, typ.220 mΩ
    Rds(on) @ VGS = 15 V, max.320 mΩ
    Rds(on) @ VGS = 18 V, typ.160 mΩ
    Rds(on) @ VGS = 18 V, max.240 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)20 nC
    Input Capacitance (Ciss)399 pF
    Channel PolarityN-channel
    PackageTO-251

    Same-Rating Selection Table

    Part NumberVDSIDRds 15V typRds 15V maxQgCissPackage
    CRXH160M075G3800V20A22032020399TO-251
    CRXH300M075G3800V12A34050014221TO-251
    CRXH600M075G3800V8A52072010.9163TO-251

    3 part numbers share the same 800 / TO-251 / N rating — sorted by rds 15v typ.

    Process Technology

    Silicon carbide has a critical field roughly ten times that of silicon, so the drift layer can be far thinner for the same blocking voltage. The result is a much lower specific on-resistance at 1200 V and above, and a breakdown voltage that barely moves with temperature. The trade-offs are a narrower gate window and a body diode that should not carry continuous third-quadrant current.

    Applications

    High-voltage offline supplies, active clamp topologies, and single-stage PFC.

    Selection Notes

    • Silicon carbide holds a much flatter Rds(on) over temperature than silicon, but the gate window is narrow. Drive at 15–18 V on and a negative or zero volt off bias as the datasheet specifies.
    • The body diode is not intended for continuous third-quadrant conduction. Where the topology requires it, check the datasheet's reverse conduction figures or add an external Schottky.
    • Switching speed is limited by the gate loop, not the die. Keep the gate loop inductance low and budget for a negative turn-off spike on the gate.
    • Paralleling needs matched VGS(th). Because VGS(th) spread is narrow the parts parallel well, but layout symmetry still decides current sharing.

    Common Questions

    Is the CRXH160M075G3 an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 800 V.

    Can the CRXH160M075G3 be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 15 V gate drive, so use a driver that reaches 15 V.

    How much gate charge does the CRXH160M075G3 need?

    Qg is 20 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRXH160M075G3 come in?

    TO-251. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 3 part numbers in this rating group?

    All 3 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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