CRXQ27M120G4Z CR Micro 1200V 70A SiC MOSFET TO-247
CRXQ27M120G4Z CR Micro 1200V 70A SiC MOSFET TO-247

CRXQ27M120G4Z CR Micro 1200V 70A SiC MOSFET TO-247

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pCRXQ27M120G4Z CR Micro 1200V 70A SiC MOSFET TO-247 — Rds(on) 34 mΩ typ, Qg 107 nC./p
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    At a Glance
    • 1200 V / 70 A continuous drain current, TO-247 package
    • Rds(on) 34 mΩ typ, 45 mΩ max at VGS = 15 V
    • Qg 107 nC and Ciss 2461 pF
    • N-channel silicon carbide, 4H-SiC

    The CR Micro CRXQ27M120G4Z is a 1200 V 70 A N-channel silicon carbide MOSFET in a TO-247 package. 34 mΩ typical at a 15 V gate drive (45 mΩ maximum); 27 mΩ typical at 18 V; Qg is 107 nC; VGS(th) 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)1200 V
    Continuous Drain Current (ID)70 A
    Rds(on) @ VGS = 15 V, typ.34 mΩ
    Rds(on) @ VGS = 15 V, max.45 mΩ
    Rds(on) @ VGS = 18 V, typ.27 mΩ
    Rds(on) @ VGS = 18 V, max.35 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)107 nC
    Input Capacitance (Ciss)2461 pF
    Channel PolarityN-channel
    PackageTO-247

    Same-Rating Selection Table

    Part NumberVDSIDRds 15V typRds 15V maxQgCissPackage
    CRXQ27M120G4Z1200V70A34451072461TO-247
    CRXQF27M120G4Q1200V70A34451072461TO-247
    CRXQ35M120G4Z1200V55A455679.61826TO-247
    CRXQF60M120G2Q1200V40A607887.31730TO-247
    CRXQF60M120G2Z1200V40A607887.31730TO-247
    CRXQ60M120G4Q1200V32A739552.61135TO-247
    CRXQ60M120G4Z1200V32A739552.61135TO-247
    CRXQ75M120G2Z1200V32A759069.51406TO-247
    CRXQ75M120G4Z1200V25A9411547899TO-247
    CRXF160M120G2Z1200V17A16020840.5659TO-247
    CRXQ160M120G2Z1200V17A16020840.5659TO-247

    11 part numbers share the same 1200 / TO-247 / N rating — sorted by rds 15v typ.

    Process Technology

    Silicon carbide has a critical field roughly ten times that of silicon, so the drift layer can be far thinner for the same blocking voltage. The result is a much lower specific on-resistance at 1200 V and above, and a breakdown voltage that barely moves with temperature. The trade-offs are a narrower gate window and a body diode that should not carry continuous third-quadrant current.

    Applications

    Solar inverters, three-phase motor drives, UPS, and railway auxiliary converters.

    Selection Notes

    • Silicon carbide holds a much flatter Rds(on) over temperature than silicon, but the gate window is narrow. Drive at 15–18 V on and a negative or zero volt off bias as the datasheet specifies.
    • The body diode is not intended for continuous third-quadrant conduction. Where the topology requires it, check the datasheet's reverse conduction figures or add an external Schottky.
    • Switching speed is limited by the gate loop, not the die. Keep the gate loop inductance low and budget for a negative turn-off spike on the gate.
    • Paralleling needs matched VGS(th). Because VGS(th) spread is narrow the parts parallel well, but layout symmetry still decides current sharing.

    Common Questions

    Is the CRXQ27M120G4Z an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 1200 V.

    Can the CRXQ27M120G4Z be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 15 V gate drive, so use a driver that reaches 15 V.

    How much gate charge does the CRXQ27M120G4Z need?

    Qg is 107 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRXQ27M120G4Z come in?

    TO-247. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 11 part numbers in this rating group?

    All 11 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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