CRXQA35M120G4Z CR Micro 1200V 55A SiC MOSFET TO-247-4C
CRXQA35M120G4Z CR Micro 1200V 55A SiC MOSFET TO-247-4C

CRXQA35M120G4Z CR Micro 1200V 55A SiC MOSFET TO-247-4C

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pCRXQA35M120G4Z CR Micro 1200V 55A SiC MOSFET TO-247-4C — Rds(on) 45 mΩ typ, Qg 79.6 nC./p
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    At a Glance
    • 1200 V / 55 A continuous drain current, TO-247-4C package
    • Rds(on) 45 mΩ typ, 56 mΩ max at VGS = 15 V
    • Qg 79.6 nC and Ciss 1826 pF
    • N-channel silicon carbide, 4H-SiC

    The CR Micro CRXQA35M120G4Z is a 1200 V 55 A N-channel silicon carbide MOSFET in a TO-247-4C package. 45 mΩ typical at a 15 V gate drive (56 mΩ maximum); 35 mΩ typical at 18 V; Qg is 79.6 nC; VGS(th) 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)1200 V
    Continuous Drain Current (ID)55 A
    Rds(on) @ VGS = 15 V, typ.45 mΩ
    Rds(on) @ VGS = 15 V, max.56 mΩ
    Rds(on) @ VGS = 18 V, typ.35 mΩ
    Rds(on) @ VGS = 18 V, max.46 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)79.6 nC
    Input Capacitance (Ciss)1826 pF
    Channel PolarityN-channel
    PackageTO-247-4C

    Same-Rating Selection Table

    Part NumberVDSIDRds 15V typRds 15V maxQgCissPackage
    CRXQC18M120G4Z1200V100A23301523446TO-247-4C
    CRXQA35M120G4Q1200V55A455679.61826TO-247-4C
    CRXQA35M120G4Z1200V55A455679.61826TO-247-4C
    CRXQC35M120G4Z1200V55A455679.61826TO-247-4C

    4 part numbers share the same 1200 / TO-247-4C / N rating — sorted by rds 15v typ.

    Process Technology

    Silicon carbide has a critical field roughly ten times that of silicon, so the drift layer can be far thinner for the same blocking voltage. The result is a much lower specific on-resistance at 1200 V and above, and a breakdown voltage that barely moves with temperature. The trade-offs are a narrower gate window and a body diode that should not carry continuous third-quadrant current.

    Applications

    Solar inverters, three-phase motor drives, UPS, and railway auxiliary converters.

    Selection Notes

    • Silicon carbide holds a much flatter Rds(on) over temperature than silicon, but the gate window is narrow. Drive at 15–18 V on and a negative or zero volt off bias as the datasheet specifies.
    • The body diode is not intended for continuous third-quadrant conduction. Where the topology requires it, check the datasheet's reverse conduction figures or add an external Schottky.
    • Switching speed is limited by the gate loop, not the die. Keep the gate loop inductance low and budget for a negative turn-off spike on the gate.
    • Paralleling needs matched VGS(th). Because VGS(th) spread is narrow the parts parallel well, but layout symmetry still decides current sharing.

    Common Questions

    Is the CRXQA35M120G4Z an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 1200 V.

    Can the CRXQA35M120G4Z be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 15 V gate drive, so use a driver that reaches 15 V.

    How much gate charge does the CRXQA35M120G4Z need?

    Qg is 79.6 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRXQA35M120G4Z come in?

    TO-247-4C. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 4 part numbers in this rating group?

    All 4 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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