
The CR Micro CRXZ14M065G4Z is a 650 V 120 A N-channel silicon carbide MOSFET in a TOLL package. 18 mΩ typical at a 15 V gate drive (25 mΩ maximum); 14 mΩ typical at 18 V; Qg is 125 nC; VGS(th) 2 to 4 V.
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) | 120 A |
| Rds(on) @ VGS = 15 V, typ. | 18 mΩ |
| Rds(on) @ VGS = 15 V, max. | 25 mΩ |
| Rds(on) @ VGS = 18 V, typ. | 14 mΩ |
| Rds(on) @ VGS = 18 V, max. | 20 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 125 nC |
| Input Capacitance (Ciss) | 3127 pF |
| Channel Polarity | N-channel |
| Package | TOLL |
| Part Number | VDS | ID | Rds 15V typ | Rds 15V max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRXZ14M065G4Z | 650V | 120A | 18 | 25 | 125 | 3127 | TOLL |
| CRXZ25M065G2Z | 650V | 97A | 25 | 34 | 133 | 2775 | TOLL |
| CRXZ45M065G2Z | 650V | 49A | 45 | 60 | 74 | 1595 | TOLL |
| CRXZ60M065G2Z | 650V | 37A | 60 | 79 | 52 | 1100 | TOLL |
4 part numbers share the same 650 / TOLL / N rating — sorted by rds 15v typ.
Silicon carbide has a critical field roughly ten times that of silicon, so the drift layer can be far thinner for the same blocking voltage. The result is a much lower specific on-resistance at 1200 V and above, and a breakdown voltage that barely moves with temperature. The trade-offs are a narrower gate window and a body diode that should not carry continuous third-quadrant current.
Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.
Is the CRXZ14M065G4Z an N-channel or P-channel device?
It is N-channel. The drain-source rating is 650 V.
Can the CRXZ14M065G4Z be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 15 V gate drive, so use a driver that reaches 15 V.
How much gate charge does the CRXZ14M065G4Z need?
Qg is 125 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRXZ14M065G4Z come in?
TOLL. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 4 part numbers in this rating group?
All 4 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd