CRXZA18M120G4Z CR Micro 1200V 100A SiC MOSFET QDPAK
CRXZA18M120G4Z CR Micro 1200V 100A SiC MOSFET QDPAK

CRXZA18M120G4Z CR Micro 1200V 100A SiC MOSFET QDPAK

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pCRXZA18M120G4Z CR Micro 1200V 100A SiC MOSFET QDPAK — Rds(on) 23 mΩ typ, Qg 152 nC./p
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    At a Glance
    • 1200 V / 100 A continuous drain current, QDPAK package
    • Rds(on) 23 mΩ typ, 30 mΩ max at VGS = 15 V
    • Qg 152 nC and Ciss 3446 pF
    • N-channel silicon carbide, 4H-SiC

    The CR Micro CRXZA18M120G4Z is a 1200 V 100 A N-channel silicon carbide MOSFET in a QDPAK package. 23 mΩ typical at a 15 V gate drive (30 mΩ maximum); 18 mΩ typical at 18 V; Qg is 152 nC; VGS(th) 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)1200 V
    Continuous Drain Current (ID)100 A
    Rds(on) @ VGS = 15 V, typ.23 mΩ
    Rds(on) @ VGS = 15 V, max.30 mΩ
    Rds(on) @ VGS = 18 V, typ.18 mΩ
    Rds(on) @ VGS = 18 V, max.23 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)152 nC
    Input Capacitance (Ciss)3446 pF
    Channel PolarityN-channel
    PackageQDPAK

    Same-Rating Selection Table

    Part NumberVDSIDRds 15V typRds 15V maxQgCissPackage
    CRXZA07M120G31200V200A8.51348110715QDPAK
    CRXZA13M120G4Q1200V145A17222024659QDPAK
    CRXZA13M120G4Z1200V145A17222024659QDPAK
    CRXZA18M120G4Z1200V100A23301523446QDPAK
    CRXZA27M120G4Q1200V70A34451072461QDPAK
    CRXZA35M120G4Q1200V55A455679.61826QDPAK
    CRXZA35M120G4Z1200V55A455679.61826QDPAK
    CRXZA75M120G2Q1200V32A759069.51406QDPAK
    CRXZA75M120G4Z1200V25A9411547899QDPAK
    CRXZA140M120G4Q1200V14A17522531522QDPAK

    10 part numbers share the same 1200 / QDPAK / N rating — sorted by rds 15v typ.

    Process Technology

    Silicon carbide has a critical field roughly ten times that of silicon, so the drift layer can be far thinner for the same blocking voltage. The result is a much lower specific on-resistance at 1200 V and above, and a breakdown voltage that barely moves with temperature. The trade-offs are a narrower gate window and a body diode that should not carry continuous third-quadrant current.

    Applications

    Solar inverters, three-phase motor drives, UPS, and railway auxiliary converters.

    Selection Notes

    • Silicon carbide holds a much flatter Rds(on) over temperature than silicon, but the gate window is narrow. Drive at 15–18 V on and a negative or zero volt off bias as the datasheet specifies.
    • The body diode is not intended for continuous third-quadrant conduction. Where the topology requires it, check the datasheet's reverse conduction figures or add an external Schottky.
    • Switching speed is limited by the gate loop, not the die. Keep the gate loop inductance low and budget for a negative turn-off spike on the gate.
    • Paralleling needs matched VGS(th). Because VGS(th) spread is narrow the parts parallel well, but layout symmetry still decides current sharing.

    Common Questions

    Is the CRXZA18M120G4Z an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 1200 V.

    Can the CRXZA18M120G4Z be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 15 V gate drive, so use a driver that reaches 15 V.

    How much gate charge does the CRXZA18M120G4Z need?

    Qg is 152 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRXZA18M120G4Z come in?

    QDPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 10 part numbers in this rating group?

    All 10 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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