CRXZT25M065G2Z CR Micro 650V 97A SiC MOSFET TOLT
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- 650 V / 97 A continuous drain current, TOLT package
- Rds(on) 25 mΩ typ, 34 mΩ max at VGS = 15 V
- Qg 133 nC and Ciss 2775 pF
- N-channel silicon carbide, 4H-SiC
The CR Micro CRXZT25M065G2Z is a 650 V 97 A N-channel silicon carbide MOSFET in a TOLT package. 25 mΩ typical at a 15 V gate drive (34 mΩ maximum); 20 mΩ typical at 18 V; Qg is 133 nC; VGS(th) 1.8 to 3.6 V.
Key Specifications
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) | 97 A |
| Rds(on) @ VGS = 15 V, typ. | 25 mΩ |
| Rds(on) @ VGS = 15 V, max. | 34 mΩ |
| Rds(on) @ VGS = 18 V, typ. | 20 mΩ |
| Rds(on) @ VGS = 18 V, max. | 25 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.8 – 3.6 V |
| Total Gate Charge (Qg) | 133 nC |
| Input Capacitance (Ciss) | 2775 pF |
| Channel Polarity | N-channel |
| Package | TOLT |
Process Technology
Silicon carbide has a critical field roughly ten times that of silicon, so the drift layer can be far thinner for the same blocking voltage. The result is a much lower specific on-resistance at 1200 V and above, and a breakdown voltage that barely moves with temperature. The trade-offs are a narrower gate window and a body diode that should not carry continuous third-quadrant current.
Applications
Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.
Selection Notes
- Silicon carbide holds a much flatter Rds(on) over temperature than silicon, but the gate window is narrow. Drive at 15–18 V on and a negative or zero volt off bias as the datasheet specifies.
- The body diode is not intended for continuous third-quadrant conduction. Where the topology requires it, check the datasheet's reverse conduction figures or add an external Schottky.
- Switching speed is limited by the gate loop, not the die. Keep the gate loop inductance low and budget for a negative turn-off spike on the gate.
- Paralleling needs matched VGS(th). Because VGS(th) spread is narrow the parts parallel well, but layout symmetry still decides current sharing.
Common Questions
Is the CRXZT25M065G2Z an N-channel or P-channel device?
It is N-channel. The drain-source rating is 650 V.
Can the CRXZT25M065G2Z be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 15 V gate drive, so use a driver that reaches 15 V.
How much gate charge does the CRXZT25M065G2Z need?
Qg is 133 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRXZT25M065G2Z come in?
TOLT. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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