CS100N20AKR-G CR Micro 200V 100A N-Channel MOSFET TO-247
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- 200 V / 100 A continuous drain current, TO-247 package
- Rds(on) 18 mΩ typ, 23 mΩ max at VGS = 10 V
- Ciss 6929 pF
- N-channel, Planar process
The CR Micro CS100N20AKR-G is a 200 V 100 A N-channel MOSFET in a TO-247 package, built on the Planar process. On-resistance is 18 mΩ typical and 23 mΩ maximum at a 10 V gate drive; threshold voltage spans 2 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) | 100 A |
| Rds(on) @ VGS = 10 V, typ. | 18 mΩ |
| Rds(on) @ VGS = 10 V, max. | 23 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Input Capacitance (Ciss) | 6929 pF |
| Channel Polarity | N-channel |
| Process Family | Planar |
| Package | TO-247 |
Same-Rating Selection Table
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRSQ088N20N3Z | 200V | 140A | 7.5 | 8.8 | 83.9 | 5644 | TO-247 |
| CRSQ113N20N | 200V | 110A | 8.8 | 10.6 | 74 | 5267.7 | TO-247 |
| CRSQ113N20NZ | 200V | 110A | 8.8 | 10.6 | 74 | 5268 | TO-247 |
| CRSQ113N20NZ-Q | 200V | 115A | 8.8 | 10.6 | 74 | 5268 | TO-247 |
| CRSQ155N20N3 | 200V | 80A | 13 | 15.5 | 56.2 | 3602 | TO-247 |
| CRSQ190N20N3 | 200V | 65A | 16.5 | 19 | 40.7 | 2746 | TO-247 |
| CS100N20AKR-G | 200V | 100A | 18 | 23 | 6929 | TO-247 | |
| CS70N20AKR | 200V | 70A | 29.5 | 35 | 87.4 | 4748 | TO-247 |
| CS60N20AKR | 200V | 60A | 39 | 46 | 56.9 | 3308 | TO-247 |
9 part numbers share the same 200 / TO-247 / N rating — sorted by rds(on) typ.
Process Technology
Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.
Applications
Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CS100N20AKR-G an N-channel or P-channel device?
It is N-channel. The drain-source rating is 200 V.
Can the CS100N20AKR-G be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CS100N20AKR-G?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
What package does the CS100N20AKR-G come in?
TO-247. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 9 part numbers in this rating group?
All 9 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
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