CS10N50A0R CR Micro 500V 10A N-Channel MOSFET TO-263
CS10N50A0R CR Micro 500V 10A N-Channel MOSFET TO-263

CS10N50A0R CR Micro 500V 10A N-Channel MOSFET TO-263

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pCS10N50A0R CR Micro 500V 10A N-Channel MOSFET TO-263 — Rds(on) 500 mΩ typ, Qg 32 nC./p
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    At a Glance
    • 500 V / 10 A continuous drain current, TO-263 package
    • Rds(on) 500 mΩ typ, 750 mΩ max at VGS = 10 V
    • Qg 32 nC and Ciss 1620 pF
    • N-channel, Planar process

    The CR Micro CS10N50A0R is a 500 V 10 A N-channel MOSFET in a TO-263 package, built on the Planar process. On-resistance is 500 mΩ typical and 750 mΩ maximum at a 10 V gate drive; gate charge is 32 nC with 1620 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)500 V
    Continuous Drain Current (ID)10 A
    Rds(on) @ VGS = 10 V, typ.500 mΩ
    Rds(on) @ VGS = 10 V, max.750 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)32 nC
    Input Capacitance (Ciss)1620 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-263

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS20N50A0R500V20A240300522919TO-263
    CS13N50A0R500V13A400500401957TO-263
    CS10N50A0R500V10A500750321620TO-263

    3 part numbers share the same 500 / TO-263 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS10N50A0R an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 500 V.

    Can the CS10N50A0R be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS10N50A0R?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS10N50A0R need?

    Qg is 32 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS10N50A0R come in?

    TO-263. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 3 part numbers in this rating group?

    All 3 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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