CS10N60FA9RC-G CR Micro 600V 10A N-Channel MOSFET TO-220F
CS10N60FA9RC-G CR Micro 600V 10A N-Channel MOSFET TO-220F

CS10N60FA9RC-G CR Micro 600V 10A N-Channel MOSFET TO-220F

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pCS10N60FA9RC-G CR Micro 600V 10A N-Channel MOSFET TO-220F — Rds(on) 730 mΩ typ, Qg 32.2 nC./p
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    At a Glance
    • 600 V / 10 A continuous drain current, TO-220F package
    • Rds(on) 730 mΩ typ, 900 mΩ max at VGS = 10 V
    • Qg 32.2 nC and Ciss 1589 pF
    • N-channel, Planar process

    The CR Micro CS10N60FA9RC-G is a 600 V 10 A N-channel MOSFET in a TO-220F package, built on the Planar process. On-resistance is 730 mΩ typical and 900 mΩ maximum at a 10 V gate drive; gate charge is 32.2 nC with 1589 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)600 V
    Continuous Drain Current (ID)10 A
    Rds(on) @ VGS = 10 V, typ.730 mΩ
    Rds(on) @ VGS = 10 V, max.900 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)32.2 nC
    Input Capacitance (Ciss)1589 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-220F

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJF60N60G4FZ600V45A4560783470TO-220F
    CRJF74N60G2BF600V36A7077842200TO-220F
    CRJF125N60G2F600V25A95125461590TO-220F
    CRJF360N60G2E600V9A31536017500TO-220F
    CS20N60FA9R600V20A350450572987TO-220F
    CS16N60FA9R-G600V16A40050049.32502TO-220F
    CS16N60FA9RC-G600V16A44050050.52546TO-220F
    CRJF600N60G2E600V7A53060010.8317TO-220F
    CS12N60FA9R600V12A570750401980TO-220F
    CS12N60FA9RC-G600V12A57075039.71955TO-220F
    CS10N60FA9R600V10A680900321609TO-220F
    CS10N60FA9RC-G600V10A73090032.21589TO-220F
    CS8N60FA9H600V8A8001200291253TO-220F
    CS7N60FA9R600V7A10001300241121TO-220F
    CS7N60FA9RC-G600V8A1000130025.31111TO-220F
    CS4N60FA9R600V4A2100250014.5590TO-220F
    CS4N60FA9RC-G600V4A2100250014.7572TO-220F
    CS5N60FA9R600V5A2100250014.5590TO-220F
    CS2N60FA9R600V2A360045009.5335TO-220F

    19 part numbers share the same 600 / TO-220F / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS10N60FA9RC-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 600 V.

    Can the CS10N60FA9RC-G be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS10N60FA9RC-G?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS10N60FA9RC-G need?

    Qg is 32.2 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS10N60FA9RC-G come in?

    TO-220F. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 19 part numbers in this rating group?

    All 19 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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