CS10N80AND CR Micro 800V 10A N-Channel MOSFET TO-3PN
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- 800 V / 10 A continuous drain current, TO-3PN package
- Rds(on) 720 mΩ typ, 900 mΩ max at VGS = 10 V
- Qg 65 nC and Ciss 2900 pF
- N-channel, Planar process
The CR Micro CS10N80AND is a 800 V 10 A N-channel MOSFET in a TO-3PN package, built on the Planar process. On-resistance is 720 mΩ typical and 900 mΩ maximum at a 10 V gate drive; gate charge is 65 nC with 2900 pF input capacitance; threshold voltage spans 2 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID) | 10 A |
| Rds(on) @ VGS = 10 V, typ. | 720 mΩ |
| Rds(on) @ VGS = 10 V, max. | 900 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 65 nC |
| Input Capacitance (Ciss) | 2900 pF |
| Channel Polarity | N-channel |
| Process Family | Planar |
| Package | TO-3PN |
Process Technology
Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.
Applications
High-voltage offline supplies, active clamp topologies, and single-stage PFC.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CS10N80AND an N-channel or P-channel device?
It is N-channel. The drain-source rating is 800 V.
Can the CS10N80AND be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CS10N80AND?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CS10N80AND need?
Qg is 65 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CS10N80AND come in?
TO-3PN. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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