CS13N50FA9RC-G CR Micro 500V 13A N-Channel MOSFET TO-220F
CS13N50FA9RC-G CR Micro 500V 13A N-Channel MOSFET TO-220F

CS13N50FA9RC-G CR Micro 500V 13A N-Channel MOSFET TO-220F

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pCS13N50FA9RC-G CR Micro 500V 13A N-Channel MOSFET TO-220F — Rds(on) 370 mΩ typ, Qg 37.6 nC./p
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    At a Glance
    • 500 V / 13 A continuous drain current, TO-220F package
    • Rds(on) 370 mΩ typ, 500 mΩ max at VGS = 10 V
    • Qg 37.6 nC and Ciss 1993 pF
    • N-channel, Planar process

    The CR Micro CS13N50FA9RC-G is a 500 V 13 A N-channel MOSFET in a TO-220F package, built on the Planar process. On-resistance is 370 mΩ typical and 500 mΩ maximum at a 10 V gate drive; gate charge is 37.6 nC with 1993 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)500 V
    Continuous Drain Current (ID)13 A
    Rds(on) @ VGS = 10 V, typ.370 mΩ
    Rds(on) @ VGS = 10 V, max.500 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)37.6 nC
    Input Capacitance (Ciss)1993 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-220F

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS25N50FA9R500V25A210270643487TO-220F
    CS20N50FA9R500V20A240300522919TO-220F
    CS18N50FA9RC-G500V18A28035047.52585TO-220F
    CS15N50FA9R500V15A300400502400TO-220F
    CS18N50FA9R-G500V18A31035045.72620TO-220F
    CS13N50FA9RC-G500V13A37050037.61993TO-220F
    CS13N50FA9R500V13A400500401957TO-220F
    CS10N50FA9RC-G500V10A48075031.51646TO-220F
    CS10N50FA9R500V10A500750321620TO-220F
    CS8N50FA9R500V8A700900241136TO-220F
    CS8N50FA9RC-G500V8A70090023.61140TO-220F
    CS830FA9RD500V5A1250150014.5540TO-220F
    CS5N50FA9R500V5A1300150012.6584TO-220F

    13 part numbers share the same 500 / TO-220F / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS13N50FA9RC-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 500 V.

    Can the CS13N50FA9RC-G be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS13N50FA9RC-G?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS13N50FA9RC-G need?

    Qg is 37.6 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS13N50FA9RC-G come in?

    TO-220F. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 13 part numbers in this rating group?

    All 13 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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