CS16N65FA9RC-G CR Micro 650V 16A N-Channel MOSFET TO-220F

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CS16N65FA9RC-G CR Micro 650V 16A N-Channel MOSFET TO-220F

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pCS16N65FA9RC-G CR Micro 650V 16A N-Channel MOSFET TO-220F — Rds(on) 470 mΩ typ, Qg 48.3 nC./p

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PFC Power MOSFET 650V MOSFET CR Micro Planar MOSFET

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At a Glance

650 V / 16 A continuous drain current, TO-220F package
Rds(on) 470 mΩ typ, 560 mΩ max at VGS = 10 V
Qg 48.3 nC and Ciss 2518 pF
N-channel, Planar process

The CR Micro CS16N65FA9RC-G is a 650 V 16 A N-channel MOSFET in a TO-220F package, built on the Planar process. On-resistance is 470 mΩ typical and 560 mΩ maximum at a 10 V gate drive; gate charge is 48.3 nC with 2518 pF input capacitance; threshold voltage spans 2 to 4 V.

Key Specifications

Drain-Source Voltage (VDS)	650 V
Continuous Drain Current (ID)	16 A
Rds(on) @ VGS = 10 V, typ.	470 mΩ
Rds(on) @ VGS = 10 V, max.	560 mΩ
Gate Threshold Voltage (VGS(th))	2 – 4 V
Total Gate Charge (Qg)	48.3 nC
Input Capacitance (Ciss)	2518 pF
Channel Polarity	N-channel
Process Family	Planar
Package	TO-220F

Same-Rating Selection Table

Part Number	VDS	ID	Rds(on) typ	Rds(on) max	Qg	Ciss	Package
CRJF65N65G4FZ	650V	42A	46	65	77	3450	TO-220F
CRJF80N65G4FZ	650V	31A	68	80	58	2550	TO-220F
CRJF99N65G2	650V	32A	81	99	70	2400	TO-220F
CRJF99N65G4FZ	650V	27A	82	99	45	2000	TO-220F
CRJF110N65G4FZ	650V	26A	88	110	43	1900	TO-220F
CRJF99N65G2BF	650V	31A	90	103	70	1900	TO-220F
CRJF99N65G2F	650V	31A	90	103	57	2050	TO-220F
CRJF125N65G2BF	650V	25A	103	125	52	1580	TO-220F
CRJF140N65G2BF	650V	24A	110	140	56	1450	TO-220F
CRJF140N65G2F	650V	24A	110	140	46	1595	TO-220F
CRJF140N65G4Z	650V	22A	112	140	34	1540	TO-220F
CRJF145N65G4FZ	650V	22A	120	145	32	1380	TO-220F
CRJF185N65G4M	650V	16A	142	185	25	1180	TO-220F
CRJF180N65G2	650V	20A	145	180	36	1114	TO-220F
CRJF185N65G4Z	650V	17A	150	180	25	1150	TO-220F
CRJF190N65G2	650V	20A	150	190	40.5	1377	TO-220F
CRJF190N65G4MF	650V	16A	155	190	24	1070	TO-220F
CRJF190N65G4F	650V	16A	160	190	24	1030	TO-220F
CRJF190N65GC	650V	20A	160	190	49	1788	TO-220F
CRJF190N65G2BF	650V	19A	165	190	36	1100	TO-220F
CRJF190N65GCF	650V	20A	185	210	41	1459	TO-220F
CRJF240N65G4	650V	13A	190	240	21	930	TO-220F
CRJF240N65G4F	650V	13A	200	240	20	850	TO-220F
CRJF290N65G4	650V	10A	240	290	18	800	TO-220F
CRJF290N65G4F	650V	10A	255	290	17	725	TO-220F
CRJF290N65G4M	650V	11A	265	290	18	830	TO-220F
CRJF290N65G2	650V	13A	270	300	23.5	750	TO-220F
CRJF290N65G2M	650V	13A	280	300	15	700	TO-220F
CRJF380N65G2	650V	11A	330	380	20	572	TO-220F
CRJF380N65G4EM	650V	9A	330	380	12	600	TO-220F
CRJF380N65G4EMF	650V	9A	350	380	11	550	TO-220F
CRJF390N65GC	650V	11A	390	450	22	790	TO-220F
CRJF550N65G2	650V	8A	420	550	15.6	470	TO-220F
CS20N65FA9R	650V	20A	420	500	58	2983	TO-220F
CRJF550N65G2M	650V	7A	460	550	13.3	432	TO-220F
CRJF550N65G4EM	650V	6A	460	550	8.4	440	TO-220F
CS16N65FA9RC-G	650V	16A	470	560	48.3	2518	TO-220F
CS16N65FA9H	650V	16A	490	550	54	2450	TO-220F
CS16N65FA9R-G	650V	16A	510	560	50.5	2437	TO-220F
CRJF650N65G2	650V	7A	590	650	12.6	382	TO-220F
CRJF650N65GC	650V	7A	600	680	15	416	TO-220F
CS12N65FA9RC-G	650V	12A	600	800	40.2	1933	TO-220F
CS12N65FA9R	650V	12A	660	800	40	1993	TO-220F
CRJF850N65GC	650V	5A	730	850	11	410	TO-220F
CS10N65FA9RC-G	650V	10A	800	1000	33.6	1609	TO-220F
CR10N65FA9K	650V	10A	860	1000	32	1549	TO-220F
CS10N65FA9R	650V	10A	860	1000	32	1642	TO-220F
CS8N65FA9R-G	650V	8A	860	1000	29	1540	TO-220F
CR7N65FA9K	650V	7A	1200	1400	24	1080	TO-220F
CS7N65FA9R	650V	7A	1200	1400	24	1130	TO-220F
CS7N65FA9RC-G	650V	7A	1200	1400	23.3	1114	TO-220F
CS4N65FA9RC-G	650V	4A	2300	2800	15.1	576	TO-220F
CR4N65FA9K	650V	4A	2400	2800	15.8	564	TO-220F
CS4N65FA9R	650V	4A	2400	2800	14.5	610	TO-220F
CS2N65FA9R	650V	2A	4200	5000	9.5	335	TO-220F

55 part numbers share the same 650 / TO-220F / N rating — sorted by rds(on) typ; first 40 shown.

Process Technology

Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

Applications

Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

Selection Notes

Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

Common Questions

Is the CS16N65FA9RC-G an N-channel or P-channel device?

It is N-channel. The drain-source rating is 650 V.

Can the CS16N65FA9RC-G be driven at 4.5 V?

No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

What is the gate threshold voltage of the CS16N65FA9RC-G?

VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

How much gate charge does the CS16N65FA9RC-G need?

Qg is 48.3 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

What package does the CS16N65FA9RC-G come in?

TO-220F. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

How do I choose between the 55 part numbers in this rating group?

All 55 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

Shenzhen Gaorunxin Technology Co., Ltd