CS18N20A8RC-G CR Micro 200V 18A N-Channel MOSFET TO-220
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- 200 V / 18 A continuous drain current, TO-220 package
- Rds(on) 120 mΩ typ, 180 mΩ max at VGS = 10 V
- N-channel, Planar process
The CR Micro CS18N20A8RC-G is a 200 V 18 A N-channel MOSFET in a TO-220 package, built on the Planar process. On-resistance is 120 mΩ typical and 180 mΩ maximum at a 10 V gate drive; threshold voltage spans 2 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) | 18 A |
| Rds(on) @ VGS = 10 V, typ. | 120 mΩ |
| Rds(on) @ VGS = 10 V, max. | 180 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Channel Polarity | N-channel |
| Process Family | Planar |
| Package | TO-220 |
Same-Rating Selection Table
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRST113N20N | 200V | 105A | 8.8 | 10.6 | 69 | 4819 | TO-220 |
| CRST113N20NZ | 200V | 100A | 8.8 | 10.7 | 69 | 4819 | TO-220 |
| CRST155N20N3 | 200V | 80A | 13 | 15.5 | 55.4 | 3536 | TO-220 |
| CRST190N20N3 | 200V | 65A | 16.5 | 19 | 39 | 2654 | TO-220 |
| CRST190N20N3Z | 200V | 70A | 16.5 | 19 | 40 | 2660 | TO-220 |
| CRTT240N20N | 200V | 63A | 21 | 26 | 78 | 4347 | TO-220 |
| CS60N20A8R | 200V | 60A | 39 | 46 | 56.9 | 3308 | TO-220 |
| CS50N20A8R | 200V | 50A | 42 | 51 | 49.4 | 2819 | TO-220 |
| CS30N20A8R | 200V | 30A | 70 | 80 | 38 | 1945 | TO-220 |
| CS18N20A8R | 200V | 18A | 120 | 180 | 20.4 | 1136 | TO-220 |
| CS18N20A8RC-G | 200V | 18A | 120 | 180 | TO-220 | ||
| CS640A8H | 200V | 18A | 120 | 180 | 24 | 1140 | TO-220 |
| CS630A8H | 200V | 9A | 230 | 280 | 13 | 600 | TO-220 |
| CS9N20A8R-G | 200V | 9A | 240 | 280 | 12.6 | 560 | TO-220 |
14 part numbers share the same 200 / TO-220 / N rating — sorted by rds(on) typ.
Process Technology
Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.
Applications
Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CS18N20A8RC-G an N-channel or P-channel device?
It is N-channel. The drain-source rating is 200 V.
Can the CS18N20A8RC-G be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CS18N20A8RC-G?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
What package does the CS18N20A8RC-G come in?
TO-220. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 14 part numbers in this rating group?
All 14 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
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