CS24N60ANR CR Micro 600V 24A N-Channel MOSFET TO-3PN
- Product Details
- Download
- 600 V / 24 A continuous drain current, TO-3PN package
- Rds(on) 210 mΩ typ, 260 mΩ max at VGS = 10 V
- Qg 90.5 nC and Ciss 4710 pF
- N-channel, Planar process
The CR Micro CS24N60ANR is a 600 V 24 A N-channel MOSFET in a TO-3PN package, built on the Planar process. On-resistance is 210 mΩ typical and 260 mΩ maximum at a 10 V gate drive; gate charge is 90.5 nC with 4710 pF input capacitance; threshold voltage spans 2 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 24 A |
| Rds(on) @ VGS = 10 V, typ. | 210 mΩ |
| Rds(on) @ VGS = 10 V, max. | 260 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 90.5 nC |
| Input Capacitance (Ciss) | 4710 pF |
| Channel Polarity | N-channel |
| Process Family | Planar |
| Package | TO-3PN |
Process Technology
Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.
Applications
Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CS24N60ANR an N-channel or P-channel device?
It is N-channel. The drain-source rating is 600 V.
Can the CS24N60ANR be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CS24N60ANR?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CS24N60ANR need?
Qg is 90.5 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CS24N60ANR come in?
TO-3PN. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
Online message
Shenzhen Gaorunxin Technology Co., Ltd
