CS25N50AKR CR Micro 500V 25A N-Channel MOSFET TO-247
CS25N50AKR CR Micro 500V 25A N-Channel MOSFET TO-247

CS25N50AKR CR Micro 500V 25A N-Channel MOSFET TO-247

Share
pCS25N50AKR CR Micro 500V 25A N-Channel MOSFET TO-247 — Rds(on) 210 mΩ typ, Qg 64 nC./p
    • Product Details
    • Download
    At a Glance
    • 500 V / 25 A continuous drain current, TO-247 package
    • Rds(on) 210 mΩ typ, 270 mΩ max at VGS = 10 V
    • Qg 64 nC and Ciss 3487 pF
    • N-channel, Planar process

    The CR Micro CS25N50AKR is a 500 V 25 A N-channel MOSFET in a TO-247 package, built on the Planar process. On-resistance is 210 mΩ typical and 270 mΩ maximum at a 10 V gate drive; gate charge is 64 nC with 3487 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)500 V
    Continuous Drain Current (ID)25 A
    Rds(on) @ VGS = 10 V, typ.210 mΩ
    Rds(on) @ VGS = 10 V, max.270 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)64 nC
    Input Capacitance (Ciss)3487 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-247

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS40N50AKR-G500V40A821008473TO-247
    CS25N50AKR500V25A210270643487TO-247
    CS25N50AKRZ-G500V25A210270643487TO-247

    3 part numbers share the same 500 / TO-247 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS25N50AKR an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 500 V.

    Can the CS25N50AKR be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS25N50AKR?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS25N50AKR need?

    Qg is 64 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS25N50AKR come in?

    TO-247. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 3 part numbers in this rating group?

    All 3 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

    Online message

    Shenzhen Gaorunxin Technology Co., Ltd

    Related Products