CS2N60A3R CR Micro 600V 2A N-Channel MOSFET TO-251
CS2N60A3R CR Micro 600V 2A N-Channel MOSFET TO-251

CS2N60A3R CR Micro 600V 2A N-Channel MOSFET TO-251

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pCS2N60A3R CR Micro 600V 2A N-Channel MOSFET TO-251 — Rds(on) 3600 mΩ typ, Qg 9.5 nC./p
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    At a Glance
    • 600 V / 2 A continuous drain current, TO-251 package
    • Rds(on) 3600 mΩ typ, 4500 mΩ max at VGS = 10 V
    • Qg 9.5 nC and Ciss 335 pF
    • N-channel, Planar process

    The CR Micro CS2N60A3R is a 600 V 2 A N-channel MOSFET in a TO-251 package, built on the Planar process. On-resistance is 3600 mΩ typical and 4500 mΩ maximum at a 10 V gate drive; gate charge is 9.5 nC with 335 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)600 V
    Continuous Drain Current (ID)2 A
    Rds(on) @ VGS = 10 V, typ.3600 mΩ
    Rds(on) @ VGS = 10 V, max.4500 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)9.5 nC
    Input Capacitance (Ciss)335 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-251

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS6N60A3D600V6A1000130025950TO-251
    CS7N60A3R600V7A10001300241121TO-251
    CS7N60A3RC-G600V7A1000130025.31111TO-251
    CS4N60A3R600V4A2100250014.5590TO-251
    CS2N60A3R600V2A360045009.5335TO-251
    CS1N60A3H600V0.8A1100015000492TO-251

    6 part numbers share the same 600 / TO-251 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS2N60A3R an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 600 V.

    Can the CS2N60A3R be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS2N60A3R?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS2N60A3R need?

    Qg is 9.5 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS2N60A3R come in?

    TO-251. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 6 part numbers in this rating group?

    All 6 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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